Single FETs, MOSFETs AOT8N80L product image

AOT8N80L

$2.07
  • Description:MOSFET N-CH 800V 7.4A TO220
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube

SKU:663228677ad8 Category: Brand:

  
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AOT8N80L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 800V 7.4A TO220. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOT8N80L

  • Description:MOSFET N-CH 800V 7.4A TO220
  • Series:-
  • Mfr:Alpha & Omega Semiconductor Inc.
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):800 V
  • Current - Continuous Drain (Id) @ 25°C:7.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:1.63Ohm @ 4A, 10V
  • Vgs(th) (Max) @ Id:4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:32 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:1650 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):245W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for AOT8N80L

AOT8N80L

Single FETs, MOSFETs Overview

The AOT8N80L is an N-channel power MOSFET manufactured by Alpha & Omega Semiconductor Inc. It features a drain-source voltage rating of 800 V and a continuous drain current of 7.4 A at case temperature. The device utilizes a TO-220 through-hole package with a maximum power dissipation of 245 W. Key electrical characteristics include a gate threshold voltage of 4.5 V at 250 µA, a maximum gate charge of 32 nC at 10 V, and an input capacitance of 1650 pF at 25 V. The component operates within a junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

  • High-voltage capability with an 800 V drain-source breakdown voltage for robust performance in demanding environments.
  • Through-hole construction in a TO-220 package designed for effective thermal management and high power dissipation.
  • Optimized gate charge specifications to support efficient switching operations in power conversion circuits.

Single FETs, MOSFETs Applications

  • High-voltage DC-DC converter topologies
  • Industrial motor control systems
  • Uninterruptible power supply (UPS) units

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and manufacturing lot details prior to integration. Confirm that the TO-220-3 pinout matches the target PCB footprint requirements. Ensure that thermal interface materials are compatible with the specified 245 W case temperature dissipation limit. Check for any recent product change notices regarding material composition or assembly processes.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high voltage isolation and moderate current handling capabilities. The through-hole package is suitable for applications where mechanical stability and heat sinking are prioritized over surface area constraints. Evaluate the thermal resistance characteristics against the expected ambient operating conditions to ensure reliable junction temperature maintenance.

Single FETs, MOSFETs Part Context

This part belongs to the AOT8 series of N-channel MOSFETs from Alpha & Omega Semiconductor. The series focuses on high-voltage discrete semiconductor solutions for power electronics. The AOT8N80L specifically targets applications needing reliable switching performance under high voltage stress conditions.

Single FETs, MOSFETs Replacement Considerations

Public confirmed substitute part numbers include FQP8N80C and IXFP7N80P. Verify pin compatibility and electrical parameter margins before substitution.

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