AOTF125A60L

$1.67

Description：MOSFET N-CH 600V 28A TO220F
Series：aMOS5™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube

SKU:ce2b17d9e70f Category: Single FETs, MOSFETs Brand: Alpha & Omega Semiconductor Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

AOTF125A60L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 600V 28A TO220F. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AOTF125A60L

Description：MOSFET N-CH 600V 28A TO220F
Series：aMOS5™
Mfr：Alpha & Omega Semiconductor Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：28A (Tj)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：125mOhm @ 14A, 10V
Vgs(th) (Max) @ Id：4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：39 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2993 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：36W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220F
Package / Case：TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for AOTF125A60L

AOTF125A60L

Single FETs, MOSFETs Overview

The AOTF125A60L is a 600V N-Channel Power MOSFET from Alpha & Omega Semiconductor, utilizing proprietary aMOS5 technology. It features a maximum drain-source breakdown voltage of 600V and a continuous drain current of 28A at case temperature. The device exhibits a typical on-resistance of 0.108 ohms and a maximum of 0.125 ohms at VGS=10V. Key dynamic parameters include a total gate charge of 39nC and a reverse recovery time of 375ns for the body diode. It operates within a junction temperature range of -55°C to 150°C and is housed in a TO-220F package.

Single FETs, MOSFETs Feature Summary

Proprietary aMOS5 technology delivers low on-resistance and optimized switching characteristics.
Enhanced body diode provides robustness and fast reverse recovery performance.
Optimized switching parameters are designed to improve electromagnetic interference (EMI) performance.

Single FETs, MOSFETs Applications

High-efficiency power conversion circuits
Synchronous rectification applications
Industrial motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm the TO-220F package type, as the base part number covers multiple form factors. Ensure compatibility with thermal management requirements by referencing the junction-to-case thermal resistance data. Confirm that the component meets all applicable export control regulations and legal requirements for your intended deployment environment before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a 600V rating and low conduction losses are required for high-current applications. The TO-220F package offers a balance between thermal dissipation capabilities and mounting flexibility compared to other variants in the series. Consider the gate charge specifications if driving efficiency is critical for the target switching frequency.

Single FETs, MOSFETs Part Context

This device belongs to the aMOS5 family of power transistors, which integrates advanced trench MOSFET processes for improved performance. The AOTF125A60L shares electrical characteristics with the AOT125A60L and AOB125A60L, differing primarily in the physical package configuration to suit through-hole or surface-mount assembly needs.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 600V rating, N-channel configuration, and TO-220F package. Verify that alternative components meet or exceed the 0.125 ohm on-resistance and 28A current handling capabilities to ensure circuit integrity without redesign.