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AOTF18N65 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 650V 18A TO220-3F. Review the specifications below when checking this part for your BOM.
The AOTF18N65 is a 650V, 18A N-Channel MOSFET fabricated using an advanced high voltage process. It features low RDS(on) of less than 0.39Ω at VGS=10V and guaranteed avalanche capability with 100% UIS testing. The device offers low Ciss and Crss for efficient switching in offline power supply designs. Key electrical parameters include a drain-source breakdown voltage of 650V, pulsed drain current of 80A, and total gate charge of up to 68nC. Thermal characteristics specify a junction-to-case resistance of 2.5°C/W.
Verify the specific ordering suffix when purchasing. The standard part number is AOTF18N65. For halogen-free compliance, ensure the order includes the 'L' suffix, resulting in AOTF18N65L. Confirm package type is TO-220F. Check datasheet revision dates for updated thermal or electrical specifications before finalizing design integration.
Select this component for designs requiring 650V blocking capability and continuous currents up to 18A. Consider the thermal resistance of 2.5°C/W for heatsinking requirements. Ensure gate drive voltages align with the specified VGS range. Evaluate the body diode reverse recovery characteristics if used in synchronous rectification topologies.
This component belongs to Alpha & Omega Semiconductor's discrete MOSFET portfolio. It utilizes their proprietary high voltage process technology. The TO-220F package facilitates through-hole mounting for industrial and consumer electronics. It serves as a replacement for legacy silicon MOSFETs in medium-power offline conversion stages.
Direct substitutes are not explicitly listed in the provided documentation. When replacing similar devices, verify that the new component matches the 650V rating, 18A current capacity, and TO-220F package dimensions. Ensure avalanche energy ratings and thermal impedance characteristics are compatible with the existing circuit design.
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