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AOTF190A60L is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 600V 20A TO220F. Review the specifications below when checking this part for your BOM.
The AOTF190A60L is a 600V N-Channel Power MOSFET from the aMOS5 series, packaged in TO-220F. It features a maximum drain-source breakdown voltage of 700V and a continuous drain current of 20A at case temperature. The device exhibits a maximum on-resistance of 0.19 ohms at 10V gate drive. Key dynamic parameters include a total gate charge of 34nC and a reverse recovery time of 341ns for the body diode. Thermal resistance from junction to case is 3.9°C/W.
Verify the specific package variant matches the required mounting style. Confirm that the thermal management design accommodates the junction-to-case resistance. Ensure the operating voltage does not exceed the absolute maximum ratings under all transient conditions. Check for any recent product change notices regarding pinout or material composition.
Select this component when a through-hole N-channel MOSFET is required for medium-power applications. Compare the on-resistance and gate charge against alternative packages like DPAK for space-constrained designs. Evaluate the safe operating area curves to ensure reliability under pulsed load conditions.
This part belongs to the Alpha & Omega Semiconductor aMOS5 family of N-channel power transistors. It shares the core technology with surface-mount variants such as the AOB190A60L but utilizes a TO-220F package for through-hole integration. The series focuses on balancing switching speed and conduction losses.
AOB190A60L
The absolute maximum drain-source breakdown voltage is rated at 700V.
The junction-to-case thermal resistance is specified as 3.9°C/W.
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