AOTF20C60

Single FETs, MOSFETs Overview

The AOTF20C60 is a through-hole N-channel MOSFET from Alpha & Omega Semiconductor, utilizing Trench Power AlphaMOS-II technology. It features a drain-source voltage (VDS) of 600 V and a continuous drain current (ID) of 20 A at case temperature of 25°C. The maximum on-resistance (RDS(ON)) is less than 0.25 Ω at VGS=10V and ID=10A. Key electrical parameters include a typical total gate charge (Qg) of 52 nC, pulsed drain current (IDM) of 145 A, and avalanche energy rating (EAS) of 1470 mJ. The device operates within a junction temperature range of -55°C to 150°C and is housed in a TO-220F package.

Single FETs, MOSFETs Feature Summary

• Utilizes Trench Power AlphaMOS-II technology for low on-resistance and high current capability.
• Features low input capacitance (Ciss) and reverse transfer capacitance (Crss) for efficient switching performance.
• Includes 100% Unclamped Inductive Switching (UIS) testing and repetitive avalanche energy ratings.
• Compliant with RoHS and Halogen Free standards.

Single FETs, MOSFETs Applications

• General lighting for LED and CCFL
• AC/DC power supplies for industrial applications
• AC/DC power supplies for consumer electronics
• AC/DC power supplies for telecom equipment

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'F' corresponds to the TO-220F lead-free tube packaging configuration. Confirm that the component meets the required thermal management specifications for the intended application, considering the junction-to-case thermal resistance values provided in the datasheet. Ensure compliance with the manufacturer's disclaimer regarding non-critical component usage.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring robust avalanche ruggedness and high current handling in standard through-hole layouts. The low gate charge supports efficient driver design, while the verified UIS capability simplifies protection circuitry requirements. Evaluate thermal dissipation needs against the specified junction-to-ambient resistance for the target operating environment.

Single FETs, MOSFETs Part Context

This part belongs to the AOT20C60 family, which includes variants such as AOT20C60L (TO-220) and AOB20C60 (TO-263 D2PAK). All variants share identical electrical characteristics but differ in physical package type and mounting style. The AOTF20C60 specifically denotes the lead-free TO-220F form factor suitable for automated or manual through-hole assembly processes.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes within the same electrical specification and package include AOT20C60L. Cross-package equivalents with identical pinouts and ratings include AOB20C60. Verify thermal interface compatibility when substituting between different package types.

Single FETs, MOSFETs FAQ

Is the AOTF20C60 rated for repetitive avalanche operation?

Yes, the datasheet confirms 100% UIS testing and specifies a single-pulsed avalanche energy (EAS) of 1470 mJ and repetitive avalanche energy (EAR) of 50 mJ.

What is the maximum body-diode continuous current rating?

The maximum body-diode continuous current (IS) is rated at 20 A.

Does the device support high dv/dt performance?

Yes, the MOSFET exhibits a peak diode recovery dv/dt rating of 100 V/ns and a MOSFET dv/dt ruggedness of 200 V/ns.