AOTF2918L

Single FETs, MOSFETs Overview

The AOTF2918L is a 100V N-Channel MOSFET utilizing Trench technology, packaged in TO-220. It features a drain-source voltage of 100V and a continuous drain current of 45A at 25°C case temperature. The on-resistance is less than 7mΩ at VGS=10V and ID=20A. Total gate charge is 38nC maximum at 10V. The device supports a pulsed drain current of 260A and operates within a junction temperature range of -55°C to 175°C.

Single FETs, MOSFETs Feature Summary

• Optimized for high-frequency switching with minimized power losses through low RDS(ON) and Crss combination.
• Features a soft recovery body diode for controlled switching behavior.
• Manufactured using Trench MOSFET technology for efficient performance.

Single FETs, MOSFETs Applications

• Boost converters
• Synchronous rectifiers
• Consumer power supplies
• Telecom power supplies
• Industrial power supplies
• LED backlighting

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant (TO-220 vs TO-220F) against the datasheet schematic before procurement. Confirm that the application environment remains within the specified thermal limits, as power dissipation relies heavily on heatsinking and board design. Ensure the component meets consumer market qualification standards and is not utilized in unauthorized life support systems.

Single FETs, MOSFETs Selection Notes

Select this component when a 100V rating and low on-resistance are required for synchronous rectification or boost applications. Consider the TO-220 package constraints regarding thermal management compared to surface-mount alternatives. Evaluate the total gate charge requirements against the driving circuit capabilities to ensure adequate switching speeds.

Single FETs, MOSFETs Part Context

This part belongs to the AOT2918L family, which includes variants like AOB2918L and AOT2918L. These devices share identical electrical characteristics but differ primarily in packaging styles such as D2PAK and TO-220. The series is designed for general-purpose high-current switching applications requiring robust avalanche capability.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 100V N-Channel specification, similar RDS(ON) under 7mΩ, and compatible TO-220 footprint. Verify pinout compatibility and thermal resistance values to ensure equivalent performance in existing designs without modifying the PCB layout.

Single FETs, MOSFETs FAQ

Is the AOTF2918L qualified for unclamped inductive switching?

Yes, the datasheet confirms the device has been 100% UIS tested and provides single-pulse avalanche capability ratings.

What is the maximum junction temperature for this device?

The maximum junction temperature is 175°C, although power dissipation calculations often reference a limit of 150°C depending on the specific thermal impedance used.