ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
AOU1N60 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Alpha & Omega Semiconductor Inc.. Its product description is MOSFET N-CH 600V 1.3A TO251-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for AOU1N60
- Description：MOSFET N-CH 600V 1.3A TO251-3
- Series：-
- Mfr：Alpha & Omega Semiconductor Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：1.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：9Ohm @ 650mA, 10V
- Vgs(th) (Max) @ Id：4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：8 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：160 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：45W (Tc)
- Operating Temperature：-50°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-251-3
- Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA
Single FETs, MOSFETs datasheet and documents for AOU1N60
Single FETs, MOSFETs Overview
The AOU1N60 is a surface-mount N-channel MOSFET from Alpha & Omega Semiconductor, housed in a TO-252 (DPAK) package. It features a drain-source voltage of 600V and a continuous drain current of 1.3A at 25°C case temperature. The device guarantees an on-resistance below 9Ω at VGS=10V and ID=0.65A. Key dynamic parameters include a maximum gate charge of 8nC and input capacitance of 160pF. Thermal characteristics specify a junction-to-case resistance of 2.8°C/W and a power dissipation capacity of 45W at 25°C.
Single FETs, MOSFETs Feature Summary
- Fabricated using an advanced high-voltage MOSFET process designed for robustness in AC/DC applications.
- Provides low on-resistance and reduced input/reverse transfer capacitance to facilitate adoption in offline power supply designs.
- Features guaranteed avalanche capability with 100% UIS testing.
Single FETs, MOSFETs Applications
- Offline power supply designs
- AC/DC converter circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix against official documentation to confirm package type and pinout compatibility. Confirm RoHS compliance status and lifecycle stage prior to integration. Ensure thermal management aligns with the specified junction-to-case resistance limits during operation.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring high-voltage blocking capabilities in a compact surface-mount form factor. Evaluate thermal performance based on the 45W dissipation rating and ensure adequate heatsinking or copper area to maintain junction temperatures within the 150°C maximum limit under load conditions.
Single FETs, MOSFETs Part Context
This part belongs to the AOD/AOI/AOU1N60 family of 600V N-channel MOSFETs. Variants share identical electrical specifications but differ in physical packaging: AOD uses TO-252, AOI uses TO-251, and AOU uses TO-251A. All variants are fabricated using the same high-voltage process technology.
Single FETs, MOSFETs Replacement Considerations
Direct functional equivalents include the AOD1N60 and AOI1N60. These parts share identical electrical ratings and pin configurations but utilize different packages (TO-252 and TO-251 respectively). Verify mechanical footprint compatibility before substitution.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
