APT1001RBN

Description：MOSFET N-CH 1000V 11A TO247AD
Series：POWER MOS IV®
Mfr：Microchip Technology
Package：Tube

SKU:4cdc5b332624 Category: Single FETs, MOSFETs Brand: Microchip Technology

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Product introduction

APT1001RBN is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1000V 11A TO247AD. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT1001RBN

Description：MOSFET N-CH 1000V 11A TO247AD
Series：POWER MOS IV®
Mfr：Microchip Technology
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：1000 V
Current - Continuous Drain (Id) @ 25°C：11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1Ohm @ 5.5A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：130 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：2950 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：310W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247AD
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for APT1001RBN

APT1001RBN

Single FETs, MOSFETs Overview

The APT1001RBN is a through-hole N-channel enhancement mode high voltage power MOSFET from the POWER MOS IV® series by Microchip Technology. It features a TO-247AD package with a drain-source breakdown voltage (VDSS) of 1000 V and a continuous drain current (ID) of 11 A at 25°C case temperature. The device has a maximum on-state resistance (RDS(ON)) of 1.00 Ω at VGS = 10V and ID = 5.5A, with a gate threshold voltage (VGS(TH)) max of 4V. Total gate charge (Qg) is 130 nC at VGS = 10V. Power dissipation is rated at 310 W at 25°C, operating within a junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

High voltage capability with 1000 V drain-source breakdown rating for robust operation in demanding environments.
Integrated body diode with defined reverse recovery characteristics suitable for inductive switching applications.
Enhanced thermal performance via low junction-to-case thermal resistance for efficient heat transfer.

Single FETs, MOSFETs Applications

High voltage DC-DC converters
Inductive load switching circuits
Power supply output stages

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required package variant and lead time requirements. Confirm RoHS compliance status and check for any recent product change notifications that may affect pinout or electrical specifications before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a 1000 V rating is mandatory and moderate current handling around 11 A is sufficient. Evaluate the relatively high RDS(ON) against system efficiency needs. Ensure the TO-247AD footprint fits the PCB layout and thermal management strategy.

Single FETs, MOSFETs Part Context

Part of the POWER MOS IV® family, designed for general-purpose high voltage switching. Manufactured by Microchip Technology using silicon planar technology. The TO-247AD package provides mechanical stability and thermal conductivity for through-hole mounting.

Single FETs, MOSFETs Replacement Considerations

Check datasheets for alternative parts offering lower RDS(ON) if conduction losses are critical. Verify compatibility of gate drive voltages and ensure substitute packages match the TO-247AD mechanical dimensions.