APT10086BVFRG

Single FETs, MOSFETs Overview

The APT10086BVFRG is a single N-channel Power MOSFET manufactured by Microchip Technology, housed in a TO-247-3 through-hole package. It utilizes silicon technology and operates within an ambient temperature range of -55°C to +150°C. Key electrical specifications include a drain-source breakdown voltage (Vds) of 1 kV and a continuous drain current (Id) of 13 A. The device features a maximum on-resistance (Rds On) of 860 mΩ at specified conditions, with a gate-source voltage rating of ±30 V and a threshold voltage (Vgs th) of 2 V. Additional parameters include a gate charge (Qg) of 275 nC and a power dissipation (Pd) capacity of 370 W.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with a 1 kV drain-source breakdown voltage for robust operation in demanding environments.
• Enhancement-mode N-channel construction designed for efficient switching applications.
• Through-hole mounting configuration utilizing the TO-247-3 package for secure mechanical attachment.

Single FETs, MOSFETs Applications

• High-voltage power switching circuits
• Industrial motor control systems
• Power supply inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'VRG' against the official Microchip datasheet to confirm compliance with RoHS directives and lead-free manufacturing standards. Ensure the procurement channel provides the original manufacturer's documentation to validate the part number authenticity and technical specifications before integration into designs.

Single FETs, MOSFETs Selection Notes

Select this component when a high-voltage N-channel switch with moderate current handling is required. The TO-247-3 package facilitates effective thermal management for power dissipation up to 370 W. Compare the 860 mΩ on-resistance against circuit efficiency requirements and ensure the 13 A continuous current rating aligns with the load demands of the intended application.

Single FETs, MOSFETs Part Context

This device belongs to the Microchip Power MOS V series, representing a line of silicon-based discrete transistors. The product falls under the broader category of transistors and MOSFETs, serving as a fundamental building block for power electronics. It is distinct from other series by its specific combination of 1 kV blocking voltage and through-hole packaging.

Single FETs, MOSFETs Replacement Considerations

Consult the official Microchip documentation for verified equivalent part numbers or direct replacements. Do not assume cross-compatibility with other manufacturers' devices without validating pinout, voltage ratings, and thermal characteristics against the original specifications.