APT100GT120JRDQ4

$52.55

Description：IGBT MOD 1200V 123A 570W ISOTOP
Series：Thunderbolt IGBT®

SKU:cf628f2b0213 Category: IGBT Modules Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：IGBT MOD 1200V 123A 570W ISOTOP
Series：Thunderbolt IGBT®
Mfr：Microchip Technology
Package：Tube
IGBT Type：NPT
Configuration：Single
Vce(on) (Max) @ Vge, Ic：3.7V @ 15V, 100A
Input：Standard
NTC Thermistor：No
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Chassis Mount
Package / Case：ISOTOP
Supplier Device Package：ISOTOP®
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：123 A
Power - Max：570 W
Current - Collector Cutoff (Max)：200 µA
Input Capacitance (Cies) @ Vce：7.85 nF @ 25 V

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APT100GT120JRDQ4

Overview

The APT100GT120JRDQ4 is a single IGBT module manufactured by Microchip Technology, utilizing SiC technology. It features an ISOTOP-4 package with SMD/SMT mounting style. The device has a maximum collector-emitter voltage (VCEO) of 1.2 kV and a collector-emitter saturation voltage of 3.2 V. At 25°C, the continuous collector current is 123 A, with a gate-emitter leakage current of 600 nA. Power dissipation (Pd) is rated at 570 W. The maximum operating temperature range spans from -55°C to +150°C, and the maximum gate-emitter voltage is 20 V.

Feature Summary

Integrated silicon carbide technology for enhanced switching performance
ISOTOP-4 surface-mount packaging design
Rated for high-voltage operation up to 1.2 kV

Applications

Medium frequency power conversion systems
High-efficiency industrial motor drives
Switch-mode power supply implementations

Procurement Notes

Verify component authenticity through authorized Microchip Technology distributors or direct factory channels. Confirm RoHS compliance status using official datasheets before integration. Ensure storage conditions align with manufacturer specifications to maintain device integrity. Validate ordering suffixes against current product documentation to confirm exact electrical characteristics and package variants.

Selection Notes

Evaluate thermal management requirements based on the 570 W power dissipation rating and specified operating temperature limits. Verify that the system layout supports the ISOTOP-4 surface-mount footprint and associated soldering profiles. Confirm compatibility with the 1.2 kV voltage class and 123 A current capacity for the intended load conditions.

Part Context

This component belongs to the Microchip Technology IGBT module portfolio, specifically designed for high-power applications. It represents the integration of silicon carbide technology within standard IGBT configurations to improve efficiency and switching speeds compared to traditional silicon devices.