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APT10SCD120B
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Product Detailed Parameters
- Description：DIODE SIL CARB 1200V 36A TO247
- Series：-
- Mfr：Microsemi Corporation
- Package：Tube
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：1200 V
- Current - Average Rectified (Io)：36A
- Voltage - Forward (Vf) (Max) @ If：1.8 V @ 10 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：200 µA @ 1200 V
- Capacitance @ Vr, F：600pF @ 0V, 1MHz
- Mounting Type：Through Hole
- Package / Case：TO-247-2
- Supplier Device Package：TO-247
- Operating Temperature - Junction：-55°C ~ 150°C
- Grade：-
- Qualification：-
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Overview
The APT10SCD120B is a silicon carbide Schottky diode manufactured by Microsemi Corporation. It features a maximum repetitive reverse voltage of 1200 V and an average forward current rating of 10 A. The device utilizes a surface-mount D3PAK (TO-268) package with three terminals. Key electrical characteristics include a typical forward voltage of approximately 1.8 V at 20 A and a maximum reverse leakage current of 400 µA at 1200 V. The junction operating temperature range extends from -55°C to +150°C, supporting high-temperature applications.
Feature Summary
- Utilizes silicon carbide (SiC) technology for superior thermal performance compared to traditional silicon devices.
- Features zero reverse recovery time, eliminating switching losses associated with reverse recovery charge.
- Designed for high-frequency operation due to the inherent properties of the Schottky barrier.
Applications
- High-efficiency DC-DC converters
- Uninterruptible power supplies (UPS)
- Solar micro-inverters
Procurement Notes
Verify the specific suffix 'B' against the official Microsemi datasheet to confirm exact mechanical dimensions and marking codes. Confirm RoHS compliance status as product revisions may alter environmental declarations. Ensure the D3PAK footprint matches the target PCB design. Check for obsolescence notices or PCNs that might affect long-term availability.
Selection Notes
Select this component when designing circuits requiring low reverse recovery charge and high thermal stability. The 1200V rating provides sufficient headroom for 600V AC systems. Consider the 10A current limit relative to thermal management requirements in the final enclosure. The surface-mount package facilitates automated assembly processes.
Part Context
This part belongs to Microsemi's portfolio of silicon carbide Schottky diodes, which are engineered to replace silicon PN-junction diodes in high-performance power conversion applications. The series is characterized by reduced conduction and switching losses, contributing to higher system efficiency and smaller heat sink requirements.
Replacement Considerations
Cross-reference with other 1200V SiC Schottky diodes from Microsemi or alternative manufacturers offering similar current ratings and D3PAK packaging. Verify pinout compatibility and thermal resistance values before substitution.
