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APT10SCD120K
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Product Detailed Parameters
- Description：DIODE SIL CARB 1200V 10A TO220
- Series：-
- Mfr：Microsemi Corporation
- Package：Tube
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：1200 V
- Current - Average Rectified (Io)：10A
- Voltage - Forward (Vf) (Max) @ If：1.5 V @ 10 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：-
- Capacitance @ Vr, F：-
- Mounting Type：Through Hole
- Package / Case：TO-220-2
- Supplier Device Package：TO-220-2
- Operating Temperature - Junction：-
- Grade：-
- Qualification：-
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Overview
The APT10SCD120K is a Silicon Carbide (SiC) Schottky Barrier Diode manufactured by Microsemi Corporation. It features a maximum DC reverse voltage of 1200 V and an average rectified current of 10 A. The device utilizes a TO-220-2 through-hole package, offering high thermal conductivity and a small footprint. Key electrical characteristics include a forward voltage of 1.8 V at 20 A and zero reverse recovery time, ensuring efficient switching performance.
Feature Summary
- Zero reverse recovery charge for minimal switching losses
- High thermal conductivity silicon carbide construction
- Small footprint design suitable for compact applications
Applications
- High-frequency power conversion circuits
- Industrial motor drives
- Uninterruptible power supplies (UPS)
Procurement Notes
This component is officially discontinued by the manufacturer. Verification of availability should focus on surplus or secondary market sources rather than direct factory orders. Buyers must confirm the authenticity of the source and check for potential obsolescence notices. Ensure that any replacement components meet the original electrical specifications and package dimensions to maintain system compatibility.
Selection Notes
Select this part for applications requiring high-voltage blocking capability with low switching losses. The SiC technology provides superior thermal performance compared to standard silicon diodes. Consider the TO-220-2 package constraints for PCB layout and heatsinking requirements. Verify that the operating temperature range aligns with the system's thermal management capabilities.
Part Context
The APT10SCD120K belongs to Microsemi's family of Silicon Carbide Schottky Barrier Diodes. These devices are designed to replace traditional silicon rectifiers in high-efficiency power systems. The product line emphasizes reliability and reduced energy loss in demanding industrial environments.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation due to the discontinuation status. Engineers should evaluate equivalent SiC Schottky diodes from other manufacturers with matching 1200V/10A ratings and TO-220-2 packages.
