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APT10SCD65K
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Product Detailed Parameters
- Description：DIODE SIL CARB 650V 17A TO220
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：650 V
- Current - Average Rectified (Io)：17A
- Voltage - Forward (Vf) (Max) @ If：1.8 V @ 10 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：200 µA @ 650 V
- Capacitance @ Vr, F：300pF @ 1V, 1MHz
- Mounting Type：Through Hole
- Package / Case：TO-220-2
- Supplier Device Package：TO-220-2
- Operating Temperature - Junction：-55°C ~ 150°C
- Grade：-
- Qualification：-
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Overview
The APT10SCD65K is a silicon carbide (SiC) Schottky rectifier manufactured by Microsemi Corporation. It features a dual anode common cathode configuration housed in a TO-220 package for through-hole mounting. The device supports a maximum repetitive reverse voltage of 650 V and a continuous forward current of 17 A. Key electrical parameters include a forward voltage of 1.8 V, a forward surge current of 110 A, and a reverse leakage current of 10 A. It operates within a temperature range of -55°C to +150°C junction temperature.
Feature Summary
- Utilizes silicon carbide technology for high-efficiency rectification
- Dual anode common cathode configuration for center-tapped applications
- Through-hole mounting capability via TO-220 package
Applications
- High-frequency power supply circuits
- Center-tapped rectifier configurations
- Industrial power conversion systems
Procurement Notes
This component is officially listed as obsolete or end-of-life by the manufacturer. Verification of availability requires checking authorized distributors for remaining stock or alternative sources. Ensure compliance with RoHS directives if required by specific application standards. Confirm exact pinout and thermal characteristics against the official datasheet before integration into new designs due to potential supply chain discontinuation.
Selection Notes
Select this component for applications requiring high-temperature stability and low forward voltage drop in SiC technology. The dual anode common cathode setup is suitable for bridge or center-tapped topologies. Verify that the 650 V rating and 17 A current capacity meet the circuit's peak and continuous load requirements. Consider the through-hole package constraints for PCB layout and thermal management strategies.
Part Context
Microsemi Corporation, now part of Microchip Technology, specializes in high-reliability discrete semiconductors. The APT10SCD65K belongs to their silicon carbide diode portfolio, designed for demanding power electronics environments. This product line targets industries requiring robust performance under high voltage and temperature conditions, leveraging SiC material properties for superior efficiency compared to traditional silicon devices.
Replacement Considerations
Public documentation indicates the APT10SCD120K as a related discontinued variant with different voltage ratings. No direct active substitute part numbers are confirmed in the provided source data. Engineers should consult the manufacturer's official discontinuance notification for recommended alternatives or updated product lines.
