APT10SCD65KCT

APT10SCD65KCT

  • Description:DIODE ARRAY SIC 650V 17A TO-220
  • Series:-

SKU:254aa0aa8bf4 Category: Brand:

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Product Detailed Parameters

  • Description:DIODE ARRAY SIC 650V 17A TO-220
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk
  • Diode Configuration:1 Pair Common Cathode
  • Technology:SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max):650 V
  • Current - Average Rectified (Io) (per Diode):17A
  • Voltage - Forward (Vf) (Max) @ If:1.8 V @ 10 A
  • Speed:No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr):0 ns
  • Current - Reverse Leakage @ Vr:200 µA @ 650 V
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220
  • Grade:-
  • Qualification:-

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APT10SCD65KCT

Overview

The APT10SCD65KCT is a silicon carbide Schottky center tap rectifier manufactured by Microchip Technology. It features a dual anode common cathode configuration housed in a through-hole package. The device supports a maximum repetitive reverse voltage of 650 V and conducts a continuous forward current of 17 A. Its forward voltage is rated at 1.8 V, with a non-repetitive peak forward surge current capability of 110 A. The component operates within a temperature range from -55 C to +150 C and exhibits a reverse leakage current of 10 A.

Feature Summary

  • Utilizes silicon carbide material for high-temperature stability
  • Features a center tap configuration for specific circuit topologies
  • Provides low forward voltage drop characteristics

Applications

  • High voltage ultra fast soft recovery circuits
  • Parallel diode applications
  • Snubber diode implementations

Procurement Notes

Verify the end-of-life status before design finalization, as this component is marked as discontinued. Confirm that the through-hole mounting style and TO-247AC package dimensions match your existing board layout requirements. Ensure that the 650 V rating and 17 A current capacity remain sufficient for your system's operational margins under all expected thermal conditions.

Selection Notes

Select this component when a center tap topology is required for silicon carbide rectification. The dual anode common cathode arrangement simplifies wiring in specific converter designs. Consider the 150 C maximum junction temperature for high-thermal environments where standard silicon devices may fail. Verify that the 110 A surge current rating meets transient load requirements.

Part Context

This part belongs to the silicon carbide Schottky diode category from Microchip Technology. It is designed for high-voltage power conversion applications requiring superior thermal performance compared to traditional silicon rectifiers. The center tap configuration distinguishes it from standard single or bridge rectifier arrangements.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Due to the discontinued status, alternative sourcing requires verification of pin compatibility and electrical parameter equivalence with other silicon carbide center tap rectifiers.

APT10SCD65KCTAPT10SCD65KCT

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