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APT10SCE120B
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Product Detailed Parameters
- Description：DIODE SIL CARB 1200V 43A TO247
- Series：-
- Mfr：Microsemi Corporation
- Package：Tube
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：1200 V
- Current - Average Rectified (Io)：43A
- Voltage - Forward (Vf) (Max) @ If：1.8 V @ 10 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：200 µA @ 1200 V
- Capacitance @ Vr, F：630pF @ 1V, 1MHz
- Mounting Type：Through Hole
- Package / Case：TO-247-2
- Supplier Device Package：TO-247
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
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Overview
The APT10SCE120B is a zero recovery silicon carbide Schottky diode manufactured by Microsemi. It features a maximum DC reverse voltage of 1200V and a forward current rating of 43A at 25°C case temperature, decreasing to 10A at 163°C. The device exhibits a typical forward voltage of 1.8V at 10A and 25°C. Key electrical characteristics include a maximum reverse leakage current of 200µA at 25°C and a junction capacitance of 630pF at 1MHz. Thermal resistance from junction to case is rated at 0.9°C/W.
Feature Summary
- Zero reverse recovery time (trr) for high-speed switching applications
- Low forward voltage drop to minimize conduction losses
- Low leakage current across operating temperatures
- Eliminates or minimizes the need for snubber circuits
Applications
- Anti-parallel diode in switchmode power supplies
- Inverter circuits
- Power factor correction (PFC)
Procurement Notes
Verify the component authenticity against official Microsemi documentation before integration. Confirm that the TO-247 package orientation matches your PCB footprint requirements. Ensure thermal management designs account for the specified junction-to-case thermal resistance. Validate that system operating voltages remain within the 1200V maximum repetitive reverse voltage limits under all transient conditions.
Selection Notes
Select this component when designing circuits requiring fast switching speeds without reverse recovery charge issues. Consider the TO-247 package for through-hole mounting and robust heat dissipation capabilities. Evaluate the forward voltage characteristics against efficiency targets at expected load currents. Verify compatibility with the intended operating temperature range up to 175°C junction temperature.
Part Context
This silicon carbide Schottky diode belongs to Microsemi's discrete power semiconductor portfolio. It utilizes SiC technology to achieve superior performance compared to traditional silicon rectifiers. The device is designed for high-voltage, high-frequency power conversion environments where low switching losses are critical.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
FAQ
What is the maximum repetitive peak reverse voltage?
The maximum repetitive peak reverse voltage (VRRM) is 1200 Volts.
Does this device exhibit reverse recovery charge?
No, the APT10SCE120B is a zero recovery silicon carbide Schottky diode with zero reverse recovery time (trr).
