APT10SCE170B

Overview

The APT10SCE170B is a Silicon Carbide Schottky diode rated for 1700V maximum DC reverse voltage and 23A maximum DC forward current at 25°C. It features zero reverse recovery time (trr) and low leakage current, with a typical forward voltage of 1.8V at 10A and 25°C. The device operates within a junction temperature range of -55°C to 175°C and utilizes a TO-247 package.

Feature Summary

• Zero reverse recovery time eliminates switching losses associated with conventional diodes
• Low forward voltage reduces conduction losses in high-efficiency circuits
• Silicon Carbide construction enables operation at elevated temperatures up to 175°C

Applications

• Anti-parallel diode configurations in switchmode power supplies
• Inverter circuits requiring fast switching characteristics
• Power factor correction systems

Procurement Notes

Verify the specific ordering suffix against official Microsemi documentation to confirm exact electrical tolerances and packaging variations. Ensure compliance with RoHS directives if required by your application standards. Confirm lead-free status and environmental declarations prior to procurement.

Selection Notes

Select this component for applications demanding minimal reverse recovery charge and high thermal stability. Evaluate the junction-to-case thermal resistance of 0.7°C/W for adequate heat dissipation. Consider the 1700V rating for high-voltage isolation requirements in power conversion topologies.

Part Context

This device belongs to Microsemi's Silicon Carbide Schottky diode family, designed for high-frequency and high-temperature environments. It replaces traditional silicon rectifiers in applications where efficiency and reliability are critical, offering superior performance over standard PN-junction diodes.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.