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APT1201R5BVRG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 1200V 10A TO247. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT1201R5BVRG
- Description：MOSFET N-CH 1200V 10A TO247
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：1200 V
- Current - Continuous Drain (Id) @ 25°C：10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.5Ohm @ 5A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：28 nC @ 10 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：4440 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247-3
- Package / Case：TO-247-3
Single FETs, MOSFETs datasheet and documents for APT1201R5BVRG
Single FETs, MOSFETs Overview
The APT1201R5BVRG is a single N-channel Power MOSFET manufactured by Microchip Technology. It features a drain-source breakdown voltage of 1200 V and a continuous drain current rating of 10 A at case temperature. The device exhibits a maximum on-state resistance of 1500 mΩ (1.5 Ω) at 10 V gate drive. It is housed in a TO-247-3 through-hole package, suitable for high-voltage switching applications requiring robust thermal performance.
Single FETs, MOSFETs Feature Summary
- High voltage capability with 1200 V drain-source breakdown rating
- Through-hole mounting via TO-247-3 package for secure mechanical attachment
- Single N-channel enhancement mode configuration
Single FETs, MOSFETs Applications
- High-voltage power switching circuits
- Industrial motor control systems
- Power supply output stages
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'VRG' against the official Microchip datasheet to confirm exact electrical tolerances and packaging details. Ensure the procurement source provides the manufacturer's original data sheet rather than distributor summaries to validate the 1.5 Ω Rds(on) specification. Confirm RoHS compliance status directly from the product documentation before integration into regulated designs.
Single FETs, MOSFETs Selection Notes
Select this component when designing circuits requiring 1200 V blocking capability with moderate current handling. The high on-resistance necessitates careful thermal management due to significant conduction losses. Evaluate the TO-247-3 footprint availability in the target PCB layout. Compare against lower resistance alternatives if efficiency is critical, noting that higher voltage ratings typically correlate with increased on-state resistance in silicon MOSFETs.
Single FETs, MOSFETs Part Context
This part belongs to Microchip's discrete MOSFET portfolio, specifically within the high-voltage segment. It utilizes standard silicon technology for robust operation in demanding environments. The TO-247-3 form factor is common in industrial and automotive power electronics where reliable soldering and heat dissipation are prioritized over surface-mount density.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with other Microchip APT series devices offering similar 1200 V ratings. Verify pinout compatibility and thermal characteristics before substituting. Ensure any replacement maintains or exceeds the 10 A continuous current requirement and fits the existing TO-247-3 mounting constraints.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
