APT1204R7KFLLG

Description：MOSFET N-CH 1200V 3.5A TO220
Series：POWER MOS 7®
Mfr：Microsemi Corporation
Package：Tube

SKU:cf8db55f9d8e Category: Single FETs, MOSFETs Brand: Microsemi Corporation

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Product introduction

APT1204R7KFLLG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microsemi Corporation. Its product description is MOSFET N-CH 1200V 3.5A TO220. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for APT1204R7KFLLG

Description：MOSFET N-CH 1200V 3.5A TO220
Series：POWER MOS 7®
Mfr：Microsemi Corporation
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：4.7Ohm @ 1.75A, 10V
Vgs(th) (Max) @ Id：5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：31 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：715 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：135W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220 [K]
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for APT1204R7KFLLG

APT1204R7KFLLG

Single FETs, MOSFETs Overview

The APT1204R7KFLLG is a Power MOS 7 N-Channel enhancement mode silicon MOSFET in a TO-220 package. It features a drain-source breakdown voltage of 1200V, continuous drain current of 3.5A at 25°C case temperature, and maximum on-resistance of 4.7Ω at VGS=10V. The device supports a single pulse avalanche energy of 425mJ and operates within a junction temperature range of -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

Power MOS 7 technology with patented metal gate structure for low conduction and switching losses
Integrated body diode with fast recovery characteristics
Enhanced thermal performance via TO-220 package design

Single FETs, MOSFETs Applications

High voltage power switching circuits
Inductive load control applications
Resistive switching power supplies

Single FETs, MOSFETs Procurement Notes

Verify the component matches the exact Microsemi part number APT1204R7KFLLG. Confirm the datasheet revision corresponds to 050-7391 Rev B dated August 2006. Ensure the physical package is TO-220AB with three pins. Check for electrostatic discharge sensitivity during handling.

Single FETs, MOSFETs Selection Notes

Select this component when a high-voltage N-channel MOSFET with moderate current capability is required. The 1200V rating suits high-side or high-voltage low-side configurations. Consider the 4.7Ω RDS(on) for efficiency requirements at 3.5A loads. Verify gate drive compatibility with the specified threshold voltage range.

Single FETs, MOSFETs Part Context

This device belongs to the Microsemi Power MOS 7 family of high-voltage N-channel enhancement mode power MOSFETs. The series utilizes a specific metal gate structure to optimize switching speed and reduce gate charge compared to previous generations.