ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
APT12M80B is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 800V 13A TO247. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT12M80B
- Description：MOSFET N-CH 800V 13A TO247
- Series：POWER MOS 8™
- Mfr：Microchip Technology
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：800 V
- Current - Continuous Drain (Id) @ 25°C：13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：800mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：80 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：2470 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：335W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-247 [B]
- Package / Case：TO-247-3
Single FETs, MOSFETs datasheet and documents for APT12M80B
Single FETs, MOSFETs Overview
The APT12M80B is an N-channel Power MOSFET manufactured by Microchip Technology. It features a breakdown voltage of 800 V and a continuous drain current rating of 12 A at 25°C. The device utilizes the Advanced Trench technology for optimized performance. It is housed in a TO-247 package, suitable for through-hole mounting. Key electrical characteristics include a maximum on-state resistance (RDS(on)) typically specified at low gate-source voltages, ensuring efficient conduction in power switching applications.
Single FETs, MOSFETs Feature Summary
- Advanced Trench technology for enhanced switching performance
- High voltage capability with 800 V breakdown rating
- Robust thermal design in TO-247 package
Single FETs, MOSFETs Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- High-frequency switch-mode power supplies
Single FETs, MOSFETs Procurement Notes
Verify the specific datasheet revision and ordering suffix to ensure compatibility with your design requirements. Confirm that the TO-247 package dimensions match your PCB footprint. Check for any recent product change notifications or lifecycle status updates from Microchip Technology before finalizing procurement plans.
Single FETs, MOSFETs Selection Notes
Select this component when designing circuits requiring high-voltage isolation and moderate current handling. Ensure the thermal management solution can dissipate heat generated during operation, considering the junction-to-case thermal resistance. Verify that the gate drive voltage aligns with the device's threshold and saturation requirements for optimal efficiency.
Single FETs, MOSFETs Part Context
The APT12M80B belongs to Microchip's discrete power MOSFET portfolio, specifically designed for high-voltage applications. It complements other devices in the APT series, offering a balance between voltage rating and current capacity. This part is part of the broader range of power semiconductors used in industrial and consumer electronics.
Single FETs, MOSFETs Replacement Considerations
Consult Microchip's official documentation for direct replacements or pin-compatible alternatives within the APT series. Verify that any substitute maintains the same 800 V rating and TO-247 package form factor.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
