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APT20M18B2VRG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is MOSFET N-CH 200V 100A T-MAX. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for APT20M18B2VRG
- Description：MOSFET N-CH 200V 100A T-MAX
- Series：POWER MOS V®
- Mfr：Microchip Technology
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：18mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id：4V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs：330 nC @ 10 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：9880 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：T-MAX™ [B2]
- Package / Case：TO-247-3 Variant
Single FETs, MOSFETs datasheet and documents for APT20M18B2VRG
Single FETs, MOSFETs Overview
The APT20M18B2VRG is an N-channel power MOSFET manufactured by Microchip Technology. It features a 200 V drain-source voltage rating and a maximum continuous drain current of 100 A at case temperature. The device exhibits a low on-state resistance of 18 mΩ. It is housed in a TO-247 MAX (T-MAX) package with three leads, designed for through-hole mounting. The component operates within a junction temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- High-power capability with 100 A continuous drain current rating
- Low on-state resistance for efficient power management
- Robust thermal performance in T-MAX package
Single FETs, MOSFETs Applications
- Power conversion systems
- Power management circuits
- Demanding industrial applications
Single FETs, MOSFETs Procurement Notes
Verify the complete part number including suffixes against official Microchip documentation to ensure correct package and electrical specifications. Confirm RoHS compliance status and manufacturing origin details directly from the datasheet or authorized distributor channels prior to procurement.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high current handling and low conduction losses at 200 V blocking voltage. Ensure the design accommodates the TO-247 MAX footprint and thermal requirements. Validate gate drive characteristics against the specified threshold voltage and charge parameters.
Single FETs, MOSFETs Part Context
This device belongs to the APT20M18 series of power MOSFETs from Microchip Technology. The series is engineered for robust performance in high-power environments. The specific model utilizes the T-MAX package technology to enhance thermal dissipation and mechanical stability compared to standard packages.
Single FETs, MOSFETs Replacement Considerations
Consult official Microchip substitution guides for verified alternatives. Cross-reference pinouts and electrical ratings carefully when considering equivalent parts from other manufacturers.
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