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APT20SCD65K
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Product Detailed Parameters
- Description：DIODE SIL CARB 650V 32A TO220
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- Technology：SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max)：650 V
- Current - Average Rectified (Io)：32A
- Voltage - Forward (Vf) (Max) @ If：1.8 V @ 20 A
- Speed：No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr)：0 ns
- Current - Reverse Leakage @ Vr：400 µA @ 650 V
- Capacitance @ Vr, F：680pF @ 100mV, 1MHz
- Mounting Type：Through Hole
- Package / Case：TO-220-2
- Supplier Device Package：TO-220-2
- Operating Temperature - Junction：-55°C ~ 150°C
- Grade：-
- Qualification：-
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Overview
The APT20SCD65K is a silicon carbide Schottky diode manufactured by Microsemi Corporation. It features a maximum DC reverse voltage of 650 V and an average forward current rating of 32 A. The device utilizes a TO-220 package for through-hole mounting. Key electrical characteristics include a forward voltage of 1.8 V at 20 A, a reverse leakage current of 400 µA at 650 V, and zero reverse recovery time. The junction operating temperature range extends from -55°C to 150°C.
Feature Summary
- Utilizes silicon carbide (SiC) technology for high-efficiency rectification
- Features zero reverse recovery charge for minimal switching losses
- Designed for high-temperature operation up to 150°C junction temperature
Applications
- High-frequency power conversion circuits
- Uninterruptible power supply (UPS) systems
- DC-DC converter stages requiring low reverse recovery
Procurement Notes
Verify component authenticity due to discontinuation status. Confirm RoHS compliance and specific package variant. Check for official Product Discontinuance Notifications. Ensure storage conditions meet moisture sensitivity level requirements. Validate datasheet revisions against manufacturing date codes.
Selection Notes
Select based on 650V blocking capability and 32A current handling. Consider thermal management for TO-220 packaging. Evaluate zero-recovery benefits for high-frequency applications. Compare forward voltage drop against system efficiency targets. Verify compatibility with existing PCB footprints.
Part Context
This component belongs to the Microsemi silicon carbide Schottky diode portfolio. It represents a transition from silicon-based rectifiers to wide-bandgap materials. The product line emphasizes reduced switching losses and improved thermal performance compared to traditional silicon diodes.
Replacement Considerations
Official replacement: MSC030SDA070K. Verify pinout and thermal characteristics match. Confirm voltage and current ratings are sufficient. Review updated datasheets for any parameter changes.
