APT20SCE65B

Description：DIODE SCHOTTKY 650V 20A TO247
Series：*
Mfr：Microsemi Corporation
Package：Tube

SKU:34a093d55d15 Category: Single Diodes Brand: Microsemi Corporation

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Product introduction

Product Detailed Parameters

Description：DIODE SCHOTTKY 650V 20A TO247
Series：*
Mfr：Microsemi Corporation
Package：Tube
Technology：-
Voltage - DC Reverse (Vr) (Max)：-
Current - Average Rectified (Io)：-
Voltage - Forward (Vf) (Max) @ If：-
Speed：-
Reverse Recovery Time (trr)：-
Current - Reverse Leakage @ Vr：-
Capacitance @ Vr, F：-
Mounting Type：-
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Supplier Device Package：-
Operating Temperature - Junction：-
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APT20SCE65B

Overview

The APT20SCE65B is a silicon carbide (SiC) Schottky diode manufactured by Microsemi Corporation, now part of Microchip Technology. It features a 650V repetitive reverse voltage rating and a continuous forward current capacity of 20A. The device is housed in a TO-247 through-hole package, designed for high-temperature operation up to +150°C with a minimum operating temperature of -55°C. Key electrical characteristics include a maximum forward voltage of 1.5V at rated current and a low reverse leakage current of 400µA. It supports a non-repetitive peak forward surge current of 165A and has a power dissipation rating of 114W.

Feature Summary

Utilizes silicon carbide semiconductor technology for superior thermal performance and efficiency compared to traditional silicon devices.
Features a unipolar Schottky rectifier structure that eliminates reverse recovery time, reducing switching losses and electromagnetic interference.
Designed for robust operation in high-temperature environments, maintaining reliability under extreme thermal stress conditions.

Applications

High-frequency switch-mode power supplies
Uninterruptible power supply (UPS) systems
DC-DC converters and motor drives

Procurement Notes

This component is officially discontinued and no longer manufactured by Microchip Technology. Procurement is restricted to existing stock from authorized distributors or secondary markets. Buyers must verify the authenticity and condition of available units carefully. Due to the end-of-life status, long-term supply continuity cannot be guaranteed. Alternative sourcing strategies should be evaluated immediately to mitigate production risks associated with this obsolete part number.

Selection Notes

Engineers selecting this component should consider its discontinuation status when designing new products. While the APT20SCE65B offers excellent high-temperature performance, newer generations of SiC Schottky diodes may provide improved specifications and availability. Designers should review updated datasheets for replacement options that match the required voltage, current, and package constraints. Legacy designs incorporating this part should plan for eventual migration to supported components to ensure long-term maintainability.

Part Context

The APT20SCE65B belongs to Microsemi's portfolio of silicon carbide power devices, leveraging wide-bandgap material properties for enhanced efficiency. As a discrete Schottky rectifier, it serves as a critical component in power conversion circuits where low forward voltage drop and fast switching are essential. The TO-247 package provides a balance of electrical isolation and thermal management capabilities suitable for medium-power applications.

Replacement Considerations

Publicly confirmed substitute part numbers are not explicitly listed in the provided discontinuance notification. Engineers should consult Microchip's official product selection guides for current SiC Schottky diode alternatives that meet similar 650V/20A specifications in compatible packages.