APT30SCD120B

Overview

The APT30SCD120B is a zero recovery silicon carbide Schottky diode manufactured by Microsemi. It features a maximum DC reverse voltage of 1200V and a maximum DC forward current of 99A at 25°C case temperature. The device operates within a junction temperature range of -55°C to 150°C. Key electrical characteristics include a typical forward voltage of 1.8V at 30A and 25°C, and a maximum reverse leakage current of 600μA at 1200V and 25°C. The component is available in TO-247 and D3PAK packages.

Feature Summary

• Zero recovery time (trr) eliminates reverse recovery charge issues
• Minimizes or eliminates the need for snubber circuits
• Low forward voltage reduces conduction losses
• Low leakage current enhances system reliability

Applications

• Anti-parallel diode configurations
• Switchmode power supplies
• Inverters
• Power factor correction (PFC)

Procurement Notes

Verify that the specific package variant matches the design requirements, as the product line includes both TO-247 and surface mount D3PAK options. Confirm compliance with RoHS directives if lead-free assembly is mandated, as standard versions may contain lead. Ensure thermal management solutions account for the specified junction-to-case thermal resistance values under expected operating conditions.

Selection Notes

Select this component for high-voltage applications requiring minimal switching losses due to its zero recovery characteristic. Evaluate the forward voltage drop against thermal constraints, noting that it increases significantly at higher junction temperatures. Consider the non-repetitive surge current capability when designing protection against transient overcurrent events in the target circuit topology.

Part Context

This silicon carbide Schottky diode belongs to Microsemi's high-performance power semiconductor portfolio. It utilizes wide bandgap material technology to achieve superior switching performance compared to traditional silicon rectifiers. The device is engineered for robust operation in demanding industrial environments where efficiency and reliability are critical.

Replacement Considerations

Direct substitutes must match the 1200V rating, 30A+ continuous current capacity, and zero recovery silicon carbide construction. Verify pinout compatibility between TO-247 and D3PAK variants if physical footprint changes are permissible. Cross-reference thermal resistance parameters to ensure equivalent heat dissipation capabilities.

FAQ

What is the reverse recovery time of the APT30SCD120B?

The APT30SCD120B features zero recovery times (trr), meaning it exhibits negligible reverse recovery charge during turn-off.

Can this diode be used without a snubber circuit?

Yes, the product benefits state that the zero recovery characteristic minimizes or eliminates the need for snubber circuits.

What is the maximum working peak reverse voltage?

The maximum working peak reverse voltage (VRWM) is not explicitly listed as a separate value from the maximum repetitive reverse voltage (VRRM) of 1200V in the provided ratings table.