APT50GT60BRDQ2G

Overview

The APT50GT60BRDQ2G is a single Insulated Gate Bipolar Transistor (IGBT) from the Thunderbolt HS series, manufactured by Microchip Technology. It utilizes NPT (Non-Punch Through) technology and is housed in a TO-247-3 through-hole package. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 93 A at 25°C. Key electrical parameters include a saturation voltage of 2.8 V, a power dissipation rating of 415 W, and a gate-emitter leakage current of 100 nA. It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

• NPT technology for robust performance
• Thunderbolt HS series classification
• Single configuration design

Applications

• General purpose switching applications
• Industrial motor drives
• Power supplies

Procurement Notes

Verify component authenticity through authorized Microchip distributors or direct channels. Confirm RoHS compliance status via official documentation. Check for obsolescence notices as this specific variant may have limited availability compared to standard versions. Ensure packaging integrity upon receipt.

Selection Notes

Select this component for designs requiring high voltage isolation and reliable switching. Verify thermal management capabilities match the 415 W dissipation rating. Ensure gate drive voltages remain within specified limits. Consider the TO-247-3 package constraints for PCB layout and mounting requirements.

Part Context

This part belongs to the APT50GT60 family, distinguished by the 'BRDQ2G' suffix indicating specific automotive or qualified variants. It shares core electrical characteristics with other 600V 93A IGBTs in the Thunderbolt line but may differ in qualification standards or traceability.

Replacement Considerations

Direct substitutes include APT50GT60BRG. Verify pinout compatibility and thermal resistance values before substitution. Cross-reference datasheets for any differences in switching energy or gate charge specifications.