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APT60D120BG
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Product Detailed Parameters
- Description：DIODE STD 1200V 60A TO247 [B]
- Series：-
- Mfr：Microchip Technology
- Package：Tube
- Technology：Standard
- Voltage - DC Reverse (Vr) (Max)：1200 V
- Current - Average Rectified (Io)：60A
- Voltage - Forward (Vf) (Max) @ If：2.5 V @ 60 A
- Speed：Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr)：400 ns
- Current - Reverse Leakage @ Vr：250 µA @ 1200 V
- Capacitance @ Vr, F：-
- Mounting Type：Through Hole
- Package / Case：TO-247-2
- Supplier Device Package：TO-247 [B]
- Operating Temperature - Junction：-55°C ~ 175°C
- Grade：-
- Qualification：-
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Overview
The APT60D120BG is a single ultrafast recovery diode manufactured by Microchip Technology. It features a maximum repetitive peak reverse voltage of 1200 V and a continuous forward current rating of 60 A. The device utilizes through-hole mounting in a TO-247 [B] package. Key electrical characteristics include a maximum reverse leakage current of 250 uA, a reverse recovery time of 400 ns, and an operating temperature range from -55 °C to +175 °C.
Feature Summary
- Ultrafast switching capability for high-frequency applications
- High thermal stability with extended operating temperature range up to 175 °C
- Robust construction designed for demanding power conversion environments
Applications
- High-frequency AC/DC and DC/DC converters
- Uninterruptible Power Supplies (UPS)
- Industrial motor drives and inverters
Procurement Notes
Verify the specific suffix designation against official Microchip documentation to confirm pinout and packaging variations. Ensure compatibility with existing thermal management solutions given the TO-247 form factor. Cross-reference datasheet parameters such as reverse recovery time and leakage current with system requirements before finalizing procurement decisions.
Selection Notes
Select this component when a single ultrafast diode with 1200 V blocking capability and 60 A current handling is required. The TO-247 package facilitates efficient heat dissipation for through-hole assembly. Consider the 400 ns reverse recovery time for efficiency optimization in high-speed switching circuits compared to standard recovery alternatives.
Part Context
This part belongs to Microchip's discrete rectifier portfolio, specifically within the ultrafast diode category. It serves as a fundamental building block for power electronics, offering reliability in high-voltage applications. The product line emphasizes performance metrics suitable for modern industrial and consumer power supplies requiring fast switching speeds.
Replacement Considerations
Direct substitutes may include other 1200 V, 60 A ultrafast diodes in TO-247 packages. Verify equivalent reverse recovery times and thermal resistance values. Ensure mechanical footprint compatibility for PCB mounting or panel installation during replacement procedures.
