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The APT85GR120JD60 is a single N-channel Insulated Gate Bipolar Transistor manufactured by Microchip Technology. It utilizes silicon technology and is housed in an SOT-227 package designed for screw mount installation. The device features a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 118 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 3.5 V, a gate-emitter leakage current of 250 nA, and a power dissipation rating of 595 W. It operates within a temperature range from -55°C to +150°C.
Verify the specific suffix JD60 against official Microchip documentation to confirm pinout and thermal characteristics. Confirm RoHS compliance status through the manufacturer's latest datasheet or component certification records before integration into regulated designs.
Select this component when a single discrete IGBT with 1.2 kV blocking capability is required. Ensure the application can accommodate the SOT-227 form factor and screw mounting requirements. Verify that the 118 A continuous current rating meets the load demands under expected thermal conditions.
This part belongs to the APT series of IGBTs produced by Microchip Technology. It represents a discrete semiconductor solution distinct from multi-chip modules. The SOT-227 package provides robust mechanical stability for high-power industrial environments compared to smaller surface-mount alternatives.
Cross-reference with other Microchip APT series devices sharing the SOT-227 package and 1.2 kV rating. Verify pin compatibility and thermal resistance values before substituting with equivalent parts from other manufacturers.