APTGT150A120T3AG

APTGT150A120T3AG

$98.03
  • Description:IGBT MODULE 1200V 220A 833W SP3
  • Series:-

SKU:a3ca60dd434e Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT MODULE 1200V 220A 833W SP3
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • IGBT Type:Trench Field Stop
  • Configuration:Half Bridge
  • Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 150A
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SP3
  • Supplier Device Package:SP3
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):220 A
  • Power - Max:833 W
  • Current - Collector Cutoff (Max):250 µA
  • Input Capacitance (Cies) @ Vce:10.7 nF @ 25 V

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APTGT150A120T3AG

Overview

The APTGT150A120T3AG is a silicon-based IGBT module manufactured by Microchip Technology, housed in the SP3-32 package. It features a dual configuration with a maximum collector-emitter voltage (VCEO) of 1.2 kV and a continuous collector current of 220 A at 25°C. The saturation voltage is 1.7 V, while power dissipation reaches 833 W. Operating temperatures range from -40°C to +100°C, with a maximum gate-emitter voltage of 20 V. The device utilizes screw mount installation and has a gate-emitter leakage current of 400 nA.

Feature Summary

  • Dual IGBT configuration within a compact SP3-32 package
  • High voltage capability suitable for demanding power applications
  • Robust thermal performance with specified power dissipation ratings

Applications

  • Industrial motor drives
  • Uninterruptible power supplies
  • Switched-mode power supplies

Procurement Notes

Verify component authenticity through authorized Microchip Technology distributors or direct channels. Confirm RoHS compliance status via official documentation before integration. Ensure storage conditions align with semiconductor handling guidelines to prevent moisture sensitivity damage during assembly processes.

Selection Notes

Select this module for applications requiring 1.2 kV blocking voltage and high current capacity. Evaluate thermal management requirements against the 833 W dissipation rating. Compare electrical characteristics with alternative packages if space constraints differ. Verify gate drive compatibility with the 20 V maximum rating.

Part Context

This component belongs to the Microchip Technology IGBT module family, specifically designed for power electronics. It represents a silicon-based solution offering balanced performance for medium to high-power switching applications. The SP3-32 packaging provides a standardized form factor for industrial mounting solutions.

Replacement Considerations

Consult official Microchip Technology substitution guides for verified alternatives. Cross-reference pinouts and electrical parameters when considering equivalent modules from other manufacturers to ensure functional compatibility.

APTGT150A120T3AGAPTGT150A120T3AG
$98.03
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