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The APTGT200TL60G is a single IGBT module manufactured by Microchip Technology, utilizing silicon technology. It features a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current of 200 A at 25°C. The saturation voltage (VCE(sat)) is specified at 1.5 V, with a power dissipation rating of 480 W. The device operates within a temperature range of -40°C to +100°C and uses an SP6 screw-mount package. Key electrical limits include a gate-emitter voltage of ±20 V and a gate-emitter leakage current of 400 nA.
Verify the specific suffix 'G' against official Microchip documentation to confirm RoHS compliance status. Confirm the exact package variant, as 'SP6' may denote specific pinout or thermal characteristics distinct from other SP series modules. Cross-reference the datasheet revision date to ensure compatibility with current manufacturing standards and lead times.
Select this component when a 600 V, 200 A single IGBT is required in an SP6 package. Ensure the application's thermal management system can handle the 480 W power dissipation limit. Verify that the gate drive circuit supports the specified ±20 V gate-emitter voltage range. Compare performance metrics against alternative SP3 or SP6 variants if higher current density or different thermal resistance is needed.
This part belongs to the APTGT series of trench field-stop IGBT modules from Microchip Technology. These modules are designed for high-efficiency power conversion. The SP6 package provides a standardized footprint for screw-mounting, commonly used in medium-power industrial inverters and converters where reliable thermal performance and mechanical stability are critical.
Direct substitutes include the APTGT200SK60T3AG, which shares similar electrical ratings but utilizes an SP3-32 package. Designers must account for differences in physical dimensions, mounting hole patterns, and thermal interface requirements when swapping between SP6 and SP3 form factors.