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Product Detailed Parameters
- Description：IGBT MODULE 600V 50A 90W SP1
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：Trench Field Stop
- Configuration：Three Level Inverter
- Vce(on) (Max) @ Vge, Ic：1.9V @ 15V, 30A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SP1
- Supplier Device Package：SP1
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：50 A
- Power - Max：90 W
- Current - Collector Cutoff (Max)：250 µA
- Input Capacitance (Cies) @ Vce：1.6 nF @ 25 V
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Overview
The APTGT30TL601G is a silicon-based IGBT module manufactured by Microchip Technology, designed for three-phase inverter configurations. It features a SP1-12 package with screw mount installation style. The component supports a maximum collector-emitter voltage (VCEO) of 600 V and a continuous collector current of 80 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.5 V, a gate-emitter leakage current of 600 nA, and a power dissipation rating of 176 W. The unit operates within a temperature range of -40°C to +100°C, with a maximum gate-emitter voltage of 20 V.
Feature Summary
- Three-phase inverter configuration for multi-leg power conversion applications
- SP1-12 screw-mount packaging for secure mechanical attachment
- Silicon technology construction for robust switching performance
Applications
- Three-phase motor drives
- Industrial inverters
- Power supply systems
Procurement Notes
Verify the exact part number against official Microchip Technology documentation before procurement. Confirm that the specific suffix matches the required electrical characteristics and package type. Ensure compatibility with existing thermal management solutions and mounting hardware specifications. Cross-reference datasheet revisions to confirm parameter consistency.
Selection Notes
Select this module based on the 600 V voltage rating and 80 A current capacity requirements. Evaluate the SP1-12 package dimensions for PCB or chassis integration. Consider the 176 W power dissipation limit when designing heat sinking infrastructure. Verify that the operating temperature range aligns with the intended environmental conditions.
Part Context
This component belongs to the Microchip Technology IGBT module family, specifically utilizing the PM-IGBT-TFS-SP1 platform. It is categorized under IGBTs and serves as a discrete power switching element. The module integrates multiple semiconductor chips within a single insulated housing to facilitate compact power electronics designs.
