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Product Detailed Parameters
- Description：IGBT MODULE 1200V 75A 270W SP3
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：Trench Field Stop
- Configuration：Full Bridge Inverter
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 50A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SP3
- Supplier Device Package：SP3
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：75 A
- Power - Max：270 W
- Current - Collector Cutoff (Max)：250 µA
- Input Capacitance (Cies) @ Vce：3.6 nF @ 25 V
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Overview
The APTGT50H120T3G is a silicon IGBT module manufactured by Microchip Technology, housed in an SP3-32 package. It features a full bridge configuration with a maximum collector-emitter voltage of 1200 V and a continuous collector current of 75 A at 25°C. The device has a collector-emitter saturation voltage of 1.7 V, gate-emitter leakage current of 400 nA, and power dissipation of 277 W. Operating temperature ranges from -40°C to +100°C, with screw mount installation.
Feature Summary
- Utilizes Trench Field Stop technology for high-speed switching performance
- Integrated full bridge inverter configuration for compact system design
- Designed for robust operation in high-voltage power applications
Applications
- Inverter circuits
- Motor drives
- Power supplies
Procurement Notes
Verify the specific suffix 'T3G' against official Microchip documentation to confirm RoHS compliance and tape-and-reel packaging specifications. Ensure thermal interface material compatibility with the SP3-32 chassis mount style. Cross-reference datasheet revision dates to validate electrical parameters before finalizing procurement orders.
Selection Notes
Select this component for applications requiring a pre-configured full bridge topology within a single package. Consider the 1200V rating and 75A current capacity relative to load requirements. Evaluate the SP3-32 package dimensions for mechanical fit and verify thermal management capabilities to maintain junction temperatures within the specified operational range.
Part Context
This part belongs to Microchip's PM-IGBT-TFS series, utilizing Trench Field Stop technology. It is designed as a complete inverter solution, simplifying circuit layout compared to discrete components. The module integrates multiple IGBTs and diodes into a single chassis-mount unit for efficient power conversion.
Replacement Considerations
APTGT50DA120TG (Single configuration, different pinout)
FAQ
What is the specific technology used in this module?
The APTGT50H120T3G utilizes Trench Field Stop (TFS) technology.
Does this module contain a single or multiple devices?
It contains a full bridge configuration, integrating multiple IGBTs and diodes.
