APTGV30H60T3G

APTGV30H60T3G

$28.53
  • Description:IGBT MODULE 600V 50A 90W SP3
  • Series:-

SKU:799b4b176b01 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT MODULE 600V 50A 90W SP3
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk
  • IGBT Type:NPT, Trench Field Stop
  • Configuration:Full Bridge Inverter
  • Vce(on) (Max) @ Vge, Ic:1.9V @ 15V, 30A
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SP3
  • Supplier Device Package:SP3
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):50 A
  • Power - Max:90 W
  • Current - Collector Cutoff (Max):250 µA
  • Input Capacitance (Cies) @ Vce:1.6 nF @ 25 V

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APTGV30H60T3G

Overview

The APTGV30H60T3G is a silicon-based IGBT module manufactured by Microsemi Corporation, designed for high-power applications. It features a full-bridge configuration with NPT and Trench Field Stop technology. The device supports a maximum collector-emitter voltage of 600 V and delivers a continuous collector current of 50 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.5 V, a gate-emitter leakage current of 300 nA, and a power dissipation rating of 90 W. The module operates within a temperature range of -40°C to +100°C and utilizes an SP3 package with screw mount installation.

Feature Summary

  • Integrates NPT and Trench Field Stop IGBT technology for optimized switching performance
  • Provides a compact full-bridge inverter configuration suitable for chassis mounting
  • Includes integrated NTC thermistor for precise thermal monitoring

Applications

  • Industrial motor drives
  • Uninterruptible power supplies (UPS)
  • High-frequency inverters

Procurement Notes

Verify the specific manufacturing source, as Microchip Technology acquired Microsemi assets. Confirm RoHS compliance status through official documentation. Ensure the SP3-32 package dimensions match the target PCB layout. Validate that the required thermal interface material is compatible with the module's base plate specifications for optimal heat dissipation.

Selection Notes

Select this component when a 600 V full-bridge topology is required with moderate current handling capabilities. The 50 A continuous rating suits applications where space constraints favor the SP3 package over larger modules. Consider the 1.5 V saturation voltage for efficiency calculations in low-voltage systems. Ensure the driving circuit can support the standard gate voltage requirements specified in the datasheet.

Part Context

This module belongs to the APTGV series of high-speed IGBT4 power modules from Microsemi. These components are engineered for robust operation in demanding power electronics environments. The SP3 packaging offers a standardized footprint for easy integration into existing industrial designs. The series emphasizes reliability and thermal stability for long-term deployment in critical infrastructure.

Replacement Considerations

Direct substitutes may include other 600 V full-bridge modules in the SP3 package from the same manufacturer family, such as the APTGT30X60T3G or APTGF30H60T3G. Verify pin compatibility and thermal characteristics before substitution. Cross-reference datasheets to ensure equivalent electrical ratings and package dimensions.

APTGV30H60T3GAPTGV30H60T3G
$28.53
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