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Product Detailed Parameters
- Description：PM-IGBT-TFS-SP1F
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- IGBT Type：-
- Configuration：Full Bridge
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 50A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：90 A
- Power - Max：276 W
- Current - Collector Cutoff (Max)：10 µA
- Input Capacitance (Cies) @ Vce：11100 pF @ 25 V
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Overview
The APTGX50H120T1G is a full bridge IGBT power module manufactured by Microchip Technology. It utilizes Trench 7 silicon technology and operates with a collector-emitter voltage of 1200 V. The module provides a continuous collector current of 50 A at 25°C, with a peak current rating of 90 A. Key electrical parameters include a collector-emitter saturation voltage of 1.55 V and a maximum power dissipation of 276 W. It features a chassis mount installation style within the SP1F package.
Feature Summary
- Integrates Trench 7 IGBT technology for optimized switching performance
- Configured as a full bridge topology for inverter applications
- Designed for high-power density chassis mounting
Applications
- Welding converters
- EV motor drives
- Industrial motor control
Procurement Notes
Verify the specific datasheet revision and ordering information directly from Microchip Technology to ensure compliance with current manufacturing specifications. Confirm that the SP1F package dimensions and thermal characteristics align with the target application's mechanical constraints. Cross-reference technical parameters against official component documentation prior to final design integration.
Selection Notes
Select this module for applications requiring a 1200 V full bridge configuration with moderate current handling capabilities. The Trench 7 technology offers a balance of low conduction loss and fast switching speeds suitable for medium-frequency operations. Ensure the chassis mounting interface supports the required thermal management strategy for the specified power dissipation levels.
Part Context
This component belongs to the APTGX series of IGBT modules from Microchip Technology. The series is characterized by the use of advanced Trench 7 silicon planar field-stop technology. These modules are engineered for robust performance in demanding power electronics environments, offering reliable operation across standard industrial temperature ranges.
Replacement Considerations
Direct substitutes may include other Microchip full bridge modules with similar voltage and current ratings, such as variants within the APTGX or APTGT families. Verify pinout compatibility and thermal resistance values when considering alternative part numbers.
