APTLGT300A1208G

Overview

The APTLGT300A1208G is a dual IGBT module manufactured by Microchip Technology, housed in an LP8 package. It features a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 440 A at 25°C. The saturation voltage is specified at 1.7 V, with a power dissipation capacity of 1.4 kW. Operating temperatures range from -40°C to +85°C. The device utilizes silicon technology and supports screw mount installation.

Feature Summary

• Dual IGBT configuration for half-bridge applications
• Integrated isolation capability
• Designed for high-power industrial switching

Applications

• Industrial motor drives
• Uninterruptible power supplies
• High-frequency inverters

Procurement Notes

Verify the specific datasheet revision and manufacturing date code upon order confirmation. Confirm that the LP8 package dimensions match the intended heatsink interface. Ensure gate drive requirements align with the module's electrical specifications before finalizing procurement.

Selection Notes

Select this component when a dual IGBT configuration with 1.2 kV blocking voltage is required. The 440 A current rating suits high-power applications. Verify thermal management capabilities against the 1.4 kW dissipation limit. Compare package compatibility with existing PCB or busbar designs.

Part Context

This module belongs to the APTLGT series of intelligent power modules. It integrates dual IGBTs within a single encapsulated unit. The LP8 housing provides mechanical stability and electrical isolation. It serves as a core switching element in medium to high-power electronic converters.

Replacement Considerations

Direct substitutes are not confirmed in public documentation. Evaluate alternative Microchip LP8 packages with matching voltage and current ratings. Verify pinout compatibility and thermal resistance characteristics before considering any cross-reference.