APTM100A23SCTG

Overview

The APTM100A23SCTG is a Power MOS 7 MOSFET module featuring an integrated parallel Silicon Carbide Schottky diode. It provides a 1000V drain-source breakdown voltage and a continuous drain current of 36A at 25°C case temperature. The device incorporates Kelvin source connections to minimize stray inductance effects during switching. An internal NTC thermistor enables precise junction temperature monitoring. The SP4 isolated package allows direct heatsink mounting with high isolation voltage.

Feature Summary

• Power MOS 7 technology providing low on-resistance and reduced gate charge for efficient high-frequency operation
• Integrated parallel SiC Schottky diode offering zero reverse recovery and positive forward voltage temperature coefficient
• Kelvin source configuration ensuring easy drive and very low stray inductance through symmetrical lead frame design
• Internal NTC thermistor for accurate real-time temperature monitoring

Applications

• Motor control systems
• Switched Mode Power Supplies (SMPS)
• Uninterruptible Power Supplies (UPS)

Procurement Notes

Verify the specific revision level against the latest Microsemi documentation, as datasheet revisions may alter electrical characteristics or pinout definitions. Confirm RoHS compliance status directly with the manufacturer or authorized distributor, as historical batches may vary. Ensure handling procedures strictly follow Electrostatic Discharge guidelines due to component sensitivity. Validate thermal interface requirements for the SP4 package to maintain specified junction-to-case thermal resistance limits.

Selection Notes

Select this module when high-voltage isolation and fast switching are required in a compact form factor. The integrated SiC diode eliminates external freewheeling components, reducing system complexity. Evaluate the thermal impedance curves to ensure adequate heatsinking for the specified continuous current ratings. Consider the avalanche energy rating if the application involves inductive load switching without snubbers.

Part Context

This component belongs to the APTM series of discrete semiconductor modules manufactured by Microchip Technology (formerly Microsemi). The series utilizes Power MOS 7 technology to achieve high power density. The SP4 package is designed for robust mechanical mounting and electrical isolation, suitable for industrial power conversion applications requiring reliable performance under high thermal stress.

Replacement Considerations

Consult official Microchip cross-reference lists for verified substitutes. Generic replacements may lack the specific integrated SiC diode characteristics or Kelvin source configuration. Verify that any alternative maintains the same 1000V rating and compatible SP4 footprint to ensure mechanical fit.