AS3D030065C

$7.08

Description：DIODE SIL CARB 650V 35A TO2472
Series：-
Mfr：ANBON SEMICONDUCTOR (INT'L) LIMITED
Package：Tube

SKU:3bcee5138961 Category: Single Diodes Brand: ANBON SEMICONDUCTOR (INT'L) LIMITED

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Product introduction

Product Detailed Parameters

Description：DIODE SIL CARB 650V 35A TO2472
Series：-
Mfr：ANBON SEMICONDUCTOR (INT'L) LIMITED
Package：Tube
Technology：SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)：650 V
Current - Average Rectified (Io)：35A
Voltage - Forward (Vf) (Max) @ If：1.8 V @ 30 A
Speed：No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)：0 ns
Current - Reverse Leakage @ Vr：20 µA @ 650 V
Capacitance @ Vr, F：1805pF @ 0V, 1MHz
Mounting Type：Through Hole
Package / Case：TO-247-2
Supplier Device Package：TO-247-2
Operating Temperature - Junction：-55°C ~ 175°C
Grade：-
Qualification：-

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AS3D030065C

Overview

The AS3D030065C is a Silicon Carbide Schottky Diode manufactured by ANBON SEMICONDUCTOR (INT'L) LIMITED. It features a 650V repetitive peak reverse voltage and supports forward currents of 35A at case temperatures up to 135°C, or 30A up to 143°C. The device operates with a junction temperature range from -55°C to 175°C. Key electrical parameters include a maximum forward voltage of 2.3V at 30A and 175°C, and a total capacitive charge of 66nC. The component utilizes a TO-247-2 package.

Feature Summary

Zero reverse recovery current and zero forward recovery voltage
Positive temperature coefficient on forward voltage
Temperature-independent switching characteristics
Essentially no switching losses

Applications

Switch Mode Power Supplies
Power Factor Correction
Motor drive systems
PV Inverters
Wind Power Stations

Procurement Notes

Verify the specific manufacturer datasheet for the AS3D030065C to confirm all electrical ratings and thermal characteristics before integration. Ensure that the TO-247-2 mounting torque specifications are strictly followed during assembly to maintain device integrity. Cross-reference the official documentation for any updates regarding material compliance or revision history.

Selection Notes

Select this component for high-frequency applications requiring minimal switching losses and heat sink reduction. The positive temperature coefficient allows for parallel operation without thermal runaway risks. Consider the 175°C operating junction temperature when designing thermal management solutions for demanding environments.

Part Context

This part belongs to the AS3D series of Silicon Carbide Schottky Diodes produced by ANBON SEMICONDUCTOR (INT'L) LIMITED. The series is designed to replace traditional bipolar devices with unipolar alternatives, offering superior performance in power conversion circuits. The manufacturer specializes in Si and SiC-based products for automotive and industrial markets.