AS4C16M16MD1-6BIN

Memory IC Overview

The AS4C16M16MD1-6BIN is a 256 Mbit Synchronous Dynamic Random Access Memory (SDRAM) component from the Alliance Memory AS4C16M16MD1 series. It features a 16-bit data bus width and an organization of 16 Meg x 16. The device supports a maximum clock frequency of 166 MHz with a typical access time of 6 nanoseconds. It operates within a voltage range of 1.7 V to 1.95 V. The component is housed in a 60-ball Fine-Pitch Ball Grid Array (FPBGA) package, suitable for surface mount technology applications requiring compact memory solutions.

Memory IC Feature Summary

• Supports high-speed synchronous data transfer via DDR interface architecture
• Operates at low voltage levels for enhanced power efficiency
• Designed for mobile applications with compact footprint requirements

Memory IC Applications

• Mobile communication devices
• Portable consumer electronics
• Embedded systems requiring low-power memory

Memory IC Procurement Notes

Verify the specific suffix BIN against official datasheets to confirm package type and temperature grade. Ensure compatibility with system voltage rails operating between 1.7 V and 1.95 V. Confirm moisture sensitivity handling procedures are followed during assembly due to humidity-sensitive classification. Cross-reference pinouts with design specifications to prevent interface mismatches.

Memory IC Selection Notes

Select this part when a 256 Mbit capacity with a 16-bit interface is required for space-constrained designs. Consider the FPBGA-60 package for board density optimization. Evaluate thermal performance within the specified operating temperature range. Compare power consumption metrics against alternative LPDDR variants if extended battery life is critical for the target application.

Memory IC Part Context

This component belongs to the AS4C16M16MD1 series, which focuses on mobile Low Power DDR SDRAM solutions. The series provides scalable memory densities optimized for portable devices. The manufacturer emphasizes integration of control logic and memory arrays to reduce external component count. This specific model represents a mid-density option within the broader family of mobile memory products.

Memory IC Replacement Considerations

Check for direct cross-references such as AS4C16M16MD1-6BCNTR for tape-and-reel packaging variations. Verify electrical equivalence before substituting with other 256 Mbit LPDDR parts. Ensure pin compatibility and timing parameters match the existing design constraints.