Memory IC AS4C32M16MD1-5BINTR product image

AS4C32M16MD1-5BINTR

$3.08
  • Description:IC DRAM 512MBIT PARALLEL 60FBGA
  • Series:-
  • Mfr:Alliance Memory, Inc.
  • Package:Tape & Reel (TR)

SKU:e87c69b67d0e Category: Brand:

  
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AS4C32M16MD1-5BINTR is listed in the Memory IC range at ChipApex. The manufacturer field lists Alliance Memory, Inc.. Its product description is IC DRAM 512MBIT PARALLEL 60FBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for AS4C32M16MD1-5BINTR

  • Description:IC DRAM 512MBIT PARALLEL 60FBGA
  • Series:-
  • Mfr:Alliance Memory, Inc.
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:DRAM
  • Technology:SDRAM - Mobile LPDDR
  • Memory Size:512Mbit
  • Memory Organization:32M x 16
  • Memory Interface:Parallel
  • Clock Frequency:200 MHz
  • Write Cycle Time - Word, Page:15ns
  • Voltage - Supply:1.7V ~ 1.9V
  • Operating Temperature:-40°C ~ 85°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:60-TFBGA
  • Supplier Device Package:60-FBGA (8x9)
  • Access Time:700 ps
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for AS4C32M16MD1-5BINTR

AS4C32M16MD1-5BINTR

Memory IC Overview

The AS4C32M16MD1-5BINTR is a DDR SDRAM component manufactured by Alliance Memory, Inc. It features a storage capacity of 512 Mbit organized as 32M x 16 bits with a 16-bit data bus width. The device supports a maximum clock frequency of 200 MHz and has an access time of 700 ps. Operating voltage ranges from 2.3 V to 2.7 V. It is housed in a 60-ball TFBGA package and rated for industrial temperature operation between -40°C and +85°C.

Memory IC Feature Summary

  • Supports Double Data Rate (DDR) synchronous dynamic random-access memory architecture for high-speed data transfer.
  • Designed for industrial temperature environments ensuring reliable performance under extreme thermal conditions.
  • Utilizes a compact 60-ball Thin Fine-Pitch Ball Grid Array (TFBGA) package for space-constrained applications.

Memory IC Applications

  • Industrial control systems requiring robust memory solutions
  • Automotive electronics operating within extended temperature ranges
  • Embedded computing platforms utilizing DDR SDRAM interfaces

Memory IC Procurement Notes

Verify the specific suffix BINTR indicates tape and reel packaging configuration when sourcing. Confirm that the 5BIN designation aligns with the required industrial temperature grade (-40°C to +85°C). Ensure compatibility with 2.5V nominal supply voltage requirements. Check for RoHS compliance status relevant to your manufacturing region. Validate pinout compatibility with existing PCB footprints before integration.

Memory IC Selection Notes

Select this part when a 512 Mbit DDR SDRAM solution is needed for industrial-grade applications. The 200 MHz speed class suits moderate-to-high bandwidth requirements. Consider the TFBGA-60 package constraints for board layout. Compare against commercial grade variants if temperature range can be relaxed. Verify power supply stability within the 2.3V to 2.7V window for optimal signal integrity.

Memory IC Part Context

This component belongs to the AS4C32M16D1 series of DDR SDRAMs from Alliance Memory. It shares architectural similarities with other members of the family but differs in packaging and temperature rating. The BINTR suffix specifically denotes the bulk tape and reel shipping format, distinguishing it from tray-packaged equivalents like the TCN variant.

Memory IC Replacement Considerations

AS4C32M16D1A-5TCN offers similar electrical specifications but in a TSOP-II package with commercial temperature range. AS4C32M16SB-7BIN provides SDR technology instead of DDR, requiring interface redesign. No direct pin-compatible industrial DDR replacements are confirmed in the provided source material.

AS4C32M16MD1-5BINTRAS4C32M16MD1-5BINTR
$3.08
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