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AS4D040120P2
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Product Detailed Parameters
- Description：1200V,40A SILICON CARBIDE SCHOTT
- Series：-
- Mfr：ANBON SEMICONDUCTOR (INT'L) LIMITED
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：-
- Voltage - DC Reverse (Vr) (Max)：-
- Current - Average Rectified (Io)：-
- Voltage - Forward (Vf) (Max) @ If：-
- Speed：-
- Reverse Recovery Time (trr)：-
- Current - Reverse Leakage @ Vr：-
- Capacitance @ Vr, F：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Operating Temperature - Junction：-
- Grade：-
- Qualification：-
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Overview
The AS4D040120P2 is a Silicon Carbide Schottky diode in a TO-247-3 package. It features a 1200 V repetitive peak reverse voltage and a 40 A forward current at TC ≤ 135°C. The device utilizes new thin wafer technology to achieve low forward voltage drop, zero reverse recovery current, and zero forward recovery voltage. Key electrical parameters include a maximum forward voltage of 2.0 V at TJ = 175°C and a total capacitive charge of 50 nC. Thermal resistance from junction to case is 0.7 °C/W per leg.
Feature Summary
- Zero reverse recovery current and zero forward recovery voltage for essentially no switching losses
- Positive temperature coefficient on forward voltage enabling parallel operation without thermal runaway
- Temperature-independent switching characteristics
Applications
- Switch mode power supplies (SMPS)
- Uninterruptible power supplies
- Motor drive systems
- Photovoltaic inverters
- Wind power stations
Procurement Notes
Verify the component against the official Anbon Semiconductor datasheet document ID AS-327007, revision B, dated 2024/08/27. Confirm the part marking matches AS4D040120P2 and the package is TO-247-3. Ensure specifications align with the provided electrical characteristics table for verification purposes.
Selection Notes
Select this component for high-frequency applications requiring minimal switching losses and zero reverse recovery charge. The positive temperature coefficient supports parallel device configurations. Consider the thermal resistance of 0.7 °C/W per leg for heat sink sizing. The device operates within a junction temperature range of -55 to 175°C.
Part Context
This silicon carbide Schottky diode replaces traditional bipolar devices with unipolar technology. It is designed for renewable energy systems and AI server power solutions. The product line emphasizes high efficiency and reliability through advanced SiC MOSFET technology integration.
Replacement Considerations
Public confirmed substitute part numbers are not available in the source material.
FAQ
What is the maximum operating junction temperature?
The maximum operating junction temperature is 175°C.
Does the device exhibit reverse recovery current?
No, the device features zero reverse recovery current.
