AS6C4008A-55BIN

AS6C4008A-55BIN

  • Description:IC SRAM 4MBIT PARALLEL 36TFBGA
  • Series:-
  • Mfr:Alliance Memory, Inc.
  • Package:Tray

SKU:0f5a0ca718f8 Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 4MBIT PARALLEL 36TFBGA
  • Series:-
  • Mfr:Alliance Memory, Inc.
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Asynchronous
  • Memory Size:4Mbit
  • Memory Organization:512K x 8
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:55ns
  • Voltage - Supply:2.7V ~ 3.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:36-TFBGA
  • Supplier Device Package:36-TFBGA (6x8)
  • Access Time:55 ns
  • Grade:-
  • Qualification:-

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AS6C4008A-55BIN

Overview

The AS6C4008A-55BIN is a 4 Mbit (512K x 8) low-power CMOS static random access memory manufactured by Alliance Memory. It features an asynchronous parallel interface with a maximum access time of 55 ns. The device operates on a single power supply ranging from 2.7 V to 3.6 V, with a maximum operating current of 30 mA and standby current of 4 µA. It supports TTL-compatible outputs and includes tri-state control for bus interfacing. The component is housed in a 32-pin TSOP-II package and is rated for industrial temperature operation between -40°C and +85°C.

Feature Summary

  • Low-power CMOS technology ensures stable standby current across the operating temperature range.
  • Fully static operation eliminates the need for external clock signals during read or write cycles.
  • TTL-compatible outputs facilitate direct interfacing with standard logic families without level shifting.

Applications

  • Embedded systems requiring non-volatile-like data retention during power loss via battery backup
  • Industrial control units needing fast random access for real-time data buffering
  • Communication equipment utilizing high-speed parallel data transfer interfaces

Procurement Notes

Verify the specific suffix BIN against official datasheets to confirm the package type and moisture sensitivity level. Confirm RoHS compliance status through manufacturer documentation prior to integration. Check for end-of-life notifications as older SRAM variants may face discontinuation. Ensure voltage levels match the 2.7V to 3.6V specification for reliable operation.

Selection Notes

Select this component when a 512K x 8 organization is required with 55 ns speed in a compact surface-mount package. Compare against the AS6C4008-55TIN if a TSOP-I package is preferred instead of TSOP-II. Consider higher density options like the AS6C1608 series if larger storage capacity is needed within similar speed constraints.

Part Context

This part belongs to the AS6C4008 family of low-power SRAMs designed for general-purpose memory applications. It complements other members like the AS6C4008-55SIN and AS6C4008-55PCN, which offer different packaging options such as SOP or DIP. The family emphasizes reliability and low power consumption for portable and industrial electronics.

Replacement Considerations

Direct pin-to-pin replacements include the AS6C4008-55BIN and AS6C4008-55PCN. Verify electrical parameters and package dimensions before substitution. Cross-reference with AS6C4008-55TIN if TSOP-I packaging is acceptable.

AS6C4008A-55BINAS6C4008A-55BIN

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