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The AS6C4008A-55BINTR is a 4 Mbit (512K x 8) low-power CMOS static random access memory manufactured by Alliance Memory. It features a parallel interface with a maximum access time of 55 ns. The device operates on a single power supply ranging from 2.7 V to 5.5 V, with a typical operating current of 30 mA and standby current of 4 µA. It supports TTL-compatible outputs and includes tri-state control. The component is housed in a 32-pin TSOP-II package and is designed for industrial temperature ranges.
Verify the specific suffix BINTR against official datasheets to confirm the tape-and-reel packaging format and moisture sensitivity level. Ensure compatibility with existing PCB footprints for the 32-pin TSOP-II package. Confirm that the 55 ns access speed meets system timing requirements before finalizing procurement decisions.
Select this component when a 512K x 8 organization is required with parallel bus connectivity. It is suitable for designs needing wide voltage tolerance between 2.7 V and 5.5 V. Consider the TSOP-II form factor for surface-mount applications where space efficiency is prioritized over through-hole mounting options.
This part belongs to the AS6C4008 series of asynchronous SRAMs. It serves as a high-reliability memory solution fabricated using advanced CMOS processes. The series is characterized by its robust performance in various electronic environments, offering a balance of speed and power efficiency for general-purpose memory applications.
Check for AS6C4008-55BIN or AS6C4008-55PIN equivalents within the same manufacturer family. Verify pinout compatibility and electrical specifications before substituting with components from other vendors to ensure functional equivalence.