AS6C4008A-55TINTR

AS6C4008A-55TINTR

  • Description:IC SRAM 4MBIT PARALLEL 32TSOP I
  • Series:-
  • Mfr:Alliance Memory, Inc.
  • Package:Tape & Reel (TR)

SKU:d93d25fad04d Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 4MBIT PARALLEL 32TSOP I
  • Series:-
  • Mfr:Alliance Memory, Inc.
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Asynchronous
  • Memory Size:4Mbit
  • Memory Organization:512K x 8
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:55ns
  • Voltage - Supply:2.7V ~ 3.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:32-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package:32-TSOP I
  • Access Time:55 ns
  • Grade:-
  • Qualification:-

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AS6C4008A-55TINTR

Overview

The AS6C4008A-55TINTR is a 4 Mbit (512K x 8) asynchronous static random access memory manufactured by Alliance Memory. It operates on a single power supply ranging from 2.7 V to 5.5 V with a maximum access time of 55 ns. The device utilizes a TSOP-II package with 32 pins for surface mount installation. It supports standard TTL-compatible outputs and features low standby current consumption typical of CMOS SRAM technology.

Feature Summary

  • Asynchronous parallel interface for direct microcontroller connection
  • Wide voltage operation supporting 2.7V to 5.5V systems
  • Low power CMOS construction with reduced standby current
  • TTL-compatible tri-state outputs for bus interfacing

Applications

  • Embedded system data buffering
  • Microcontroller external memory expansion
  • Industrial control logic storage
  • Consumer electronics cache memory

Procurement Notes

Verify the specific suffix 'TR' indicates tape and reel packaging configuration distinct from tray variants. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure ESD handling protocols are followed during assembly due to moisture sensitivity classification. Cross-reference pinout diagrams with target PCB layout requirements.

Selection Notes

Select this component when a 512K x 8 organization is required for non-volatile-like temporary storage in 5V or 3.3V logic environments. The 55 ns speed grade suits moderate-frequency asynchronous buses. Consider the TSOP-II form factor for space-constrained surface-mount designs where DIP packages are unsuitable.

Part Context

This part belongs to the AS6C4008 family of low-power CMOS SRAMs. It serves as a high-reliability alternative to older generation memory chips, offering improved power efficiency while maintaining compatibility with legacy parallel memory interfaces used in established industrial and consumer hardware architectures.

Replacement Considerations

Direct pin-to-pin replacements include the AS6C4008-55TIN and AS6C4008-55BIN. Verify electrical parameters such as standby current and operating voltage ranges match application requirements before substituting.

AS6C4008A-55TINTRAS6C4008A-55TINTR

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