AS6C4016-55BINTR

AS6C4016-55BINTR

$3.55
  • Description:IC SRAM 4MBIT PARALLEL 48TFBGA
  • Series:-
  • Mfr:Alliance Memory, Inc.
  • Package:Tape & Reel (TR)

SKU:49b6807ebe23 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC SRAM 4MBIT PARALLEL 48TFBGA
  • Series:-
  • Mfr:Alliance Memory, Inc.
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Asynchronous
  • Memory Size:4Mbit
  • Memory Organization:256K x 16
  • Memory Interface:Parallel
  • Write Cycle Time - Word, Page:55ns
  • Voltage - Supply:2.7V ~ 5.5V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:48-LFBGA
  • Supplier Device Package:48-TFBGA (6x8)
  • Access Time:55 ns
  • Grade:-
  • Qualification:-

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AS6C4016-55BINTR

Overview

The AS6C4016-55BINTR is a 4 Mbit (256K x 16) asynchronous static random-access memory manufactured by Alliance Memory. It operates within a voltage range of 2.7 V to 5.5 V and features a maximum access time of 55 ns. The device supports parallel interface communication and draws a maximum supply current of 60 mA. It is housed in a TSOP-II-44 surface-mount package and is rated for an industrial operating temperature range from -40 °C to +85 °C.

Feature Summary

  • Asynchronous CMOS SRAM technology providing non-volatile data retention without clock synchronization
  • Wide single-supply voltage compatibility supporting both 3.3V and 5V logic systems
  • Industrial-grade thermal stability ensuring reliable operation across extended temperature extremes

Applications

  • Industrial control systems requiring robust memory under variable environmental conditions
  • Embedded computing architectures utilizing parallel bus interfaces
  • Automotive electronics applications demanding wide voltage tolerance

Procurement Notes

Verify the specific suffix BINTR against official datasheets to confirm the BGA or TSOP package variant and reel packaging status. Ensure the selected component matches the required 256K x 16 organization and 55 ns speed grade. Confirm RoHS compliance and lead times directly with authorized distributors, as availability varies by region.

Selection Notes

Select this component when a 4 Mbit capacity with 16-bit word width is required for parallel data processing. The 55 ns access time suits moderate-speed microcontroller applications. Verify that the system power supply remains within the 2.7 V to 5.5 V range to ensure proper logic levels and prevent excessive current draw during active operations.

Part Context

This part belongs to the AS6C4016 series of high-performance asynchronous SRAMs. It shares architectural similarities with other members like the AS6C4016-55ZINTR but differs in package type and regional distribution channels. The series is designed for general-purpose memory storage in embedded systems where fast random access is critical.

Replacement Considerations

Direct pin-compatible substitutes include the AS6C4016-55ZINTR for TSOP packages. For BGA variants, verify electrical equivalence with other 256K x 16 55ns SRAMs from the same manufacturer family.

AS6C4016-55BINTRAS6C4016-55BINTR
$3.55
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