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The AS6C4016-55BINTR is a 4 Mbit (256K x 16) asynchronous static random-access memory manufactured by Alliance Memory. It operates within a voltage range of 2.7 V to 5.5 V and features a maximum access time of 55 ns. The device supports parallel interface communication and draws a maximum supply current of 60 mA. It is housed in a TSOP-II-44 surface-mount package and is rated for an industrial operating temperature range from -40 °C to +85 °C.
Verify the specific suffix BINTR against official datasheets to confirm the BGA or TSOP package variant and reel packaging status. Ensure the selected component matches the required 256K x 16 organization and 55 ns speed grade. Confirm RoHS compliance and lead times directly with authorized distributors, as availability varies by region.
Select this component when a 4 Mbit capacity with 16-bit word width is required for parallel data processing. The 55 ns access time suits moderate-speed microcontroller applications. Verify that the system power supply remains within the 2.7 V to 5.5 V range to ensure proper logic levels and prevent excessive current draw during active operations.
This part belongs to the AS6C4016 series of high-performance asynchronous SRAMs. It shares architectural similarities with other members like the AS6C4016-55ZINTR but differs in package type and regional distribution channels. The series is designed for general-purpose memory storage in embedded systems where fast random access is critical.
Direct pin-compatible substitutes include the AS6C4016-55ZINTR for TSOP packages. For BGA variants, verify electrical equivalence with other 256K x 16 55ns SRAMs from the same manufacturer family.