AS6C4016A-45BIN

Overview

The AS6C4016A-45BIN is a 4 Mbit (256K x 16) low-power CMOS static random-access memory. It features an asynchronous parallel interface with a maximum access time of 45 ns. The device operates within a supply voltage range of 2.7 V to 3.6 V and supports industrial temperature applications from -40°C to +85°C. It is housed in a 48-pin Very Fine Pitch Ball Grid Array package.

Feature Summary

• Low-power CMOS technology for reduced energy consumption
• Asynchronous parallel interface for straightforward integration
• Switchable I/O options supporting X16 or X8 configurations

Applications

• Industrial control systems requiring non-volatile data retention during power cycles
• Embedded systems utilizing microcontrollers needing fast local data storage
• Automotive electronics operating within specified industrial temperature ranges

Procurement Notes

Verify the specific suffix BIN confirms the 48-VFBGA package and industrial temperature grade. Confirm RoHS compliance status through official documentation. Check for any Product Change Notifications regarding pinout or electrical parameter updates before finalizing procurement specifications.

Selection Notes

Select this component when a 4 Mbit capacity with 45 ns speed is required in a compact BGA footprint. Ensure the design supports 3.3V logic levels. Consider the switchable I/O feature if board space constraints necessitate an 8-bit configuration instead of the full 16-bit width.

Part Context

This part belongs to the Alliance Memory AS6C4016A series of low-power SRAMs. It provides high-speed data storage solutions for embedded applications. The series is designed to replace older generation SRAMs while offering improved power efficiency and smaller form factors suitable for modern electronic designs.

Replacement Considerations

AS6C4016A-45ZIN: Industrial grade, same electrical specs, different package.