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The AS6C4016A-45BINTR is a 4 Mbit (256K x 16) low-power CMOS static random access memory fabricated using 0.18µm technology. It features a 45 ns access time and operates on a single 2.7V to 3.6V power supply. The device draws a maximum operating current of 20 mA and standby current of 4 µA. It is housed in a 48-pin VFBGA package with dimensions of 6x7 mm, suitable for surface mount applications across an industrial temperature range of -40°C to +85°C.
Verify the specific suffix BINTR confirms the 48-pin VFBGA package and RoHS compliance status before ordering. Confirm that the switchable I/O feature aligns with your PCB design requirements. Check for any Product Change Notifications (PCN) related to manufacturing site changes. Ensure the voltage range matches your system's power rails. Validate lead times as availability may vary by region.
Select this component when a 4 Mbit capacity with fast 45 ns access is required in a compact surface-mount package. The switchable I/O capability offers flexibility for board space optimization. Compare against standard 55 ns variants if speed is not critical. Consider the VFBGA footprint constraints during layout. Verify thermal dissipation needs within the 6x7 mm package area.
This part belongs to the AS6C4016A family of low-power SRAMs from Alliance Memory. It shares architectural similarities with other members like the AS6C4016-55ZIN but differs in package type and speed grade. The family utilizes 0.18µm CMOS process technology for enhanced performance and reduced power usage compared to older generations.
AS6C4016A-55BINTR offers similar functionality with a slower 55 ns access time. AS6C4016-55ZIN provides equivalent electrical characteristics in a TSOP-II package. Cross-reference pinouts carefully when substituting packages.