AS6C4016A-55ZIN

AS6C4016A-55ZIN

$2.37
  • Description:IC SRAM 4MBIT PARALLEL 44TSOP II
  • Series:-
  • Mfr:Alliance Memory, Inc.
  • Package:Tube

SKU:7d06f6142b52 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC SRAM 4MBIT PARALLEL 44TSOP II
  • Series:-
  • Mfr:Alliance Memory, Inc.
  • Package:Tube
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Asynchronous
  • Memory Size:4Mbit
  • Memory Organization:256K x 16
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:55ns
  • Voltage - Supply:2.7V ~ 3.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package:44-TSOP II
  • Access Time:55 ns
  • Grade:-
  • Qualification:-

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AS6C4016A-55ZIN

Overview

The AS6C4016A-55ZIN is a 256K x 16 bit low power CMOS SRAM fabricated using advanced 0.18μm full CMOS process technology. It operates within a voltage range of 2.7V to 3.6V and supports an industrial temperature range from -40°C to +85°C. The device features three-state outputs that are TTL compatible, ensuring seamless integration with standard logic families. It offers a low data retention voltage of 1.5V (Min.) for battery backup applications. Available in a 44-TSOP2 package, it provides flexibility for system design while maintaining low standby and operating current consumption.

Feature Summary

  • Fabricated using advanced 0.18μm full CMOS process technology for enhanced performance and density.
  • Supports low data retention voltage for reliable battery backup operation with minimal current draw.
  • Features three-state outputs compatible with TTL logic standards for versatile interface options.
  • Designed for industrial temperature ranges to ensure stability in demanding environments.

Applications

  • Battery-backed memory systems requiring low retention voltage
  • Industrial control systems operating in wide temperature ranges
  • Embedded systems utilizing TTL-compatible logic interfaces

Procurement Notes

Verify the specific speed grade suffix against the datasheet, as the part number indicates a 45ns access time rather than 55ns. Confirm the package type matches the required 44-TSOP2 configuration. Ensure the voltage range aligns with the 2.7V to 3.6V specification. Check for RoHS compliance status if environmental regulations apply to your deployment. Validate the industrial temperature rating for your operational environment.

Selection Notes

Select this component when a 256K x 16 organization is required with low power consumption characteristics. Consider the 0.18μm CMOS process for improved efficiency compared to older technologies. Evaluate the 44-TSOP2 package for surface-mount assembly requirements. Ensure the 2.7V to 3.6V supply voltage fits your system's power architecture. Verify compatibility with TTL-compatible input/output levels for signal integrity.

Part Context

This SRAM belongs to the AS6C4016A family, which includes variants like the AS6C4016A-45BIN in a VFBGA-48 package. The family shares the same core specifications but differs in package type and potentially speed grades. The ZIN suffix denotes the 44-TSOP2 package with lead-free, RoHS-compliant construction. This places it within Alliance Memory's low-power CMOS SRAM portfolio designed for industrial applications.

Replacement Considerations

The AS6C4016A-45BIN serves as a pin-compatible alternative in a VFBGA-48 package. Both share the same electrical characteristics and organization. Verify footprint compatibility before substitution. Ensure the replacement variant meets the same industrial temperature and voltage requirements.

AS6C4016A-55ZINAS6C4016A-55ZIN
$2.37
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