AS6C4016B-45BIN

AS6C4016B-45BIN

$4.37
  • Description:IC SRAM 4MBIT PARALLEL 48TFBGA
  • Series:-
  • Mfr:Alliance Memory, Inc.
  • Package:Tray

SKU:1db037e6dfb4 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC SRAM 4MBIT PARALLEL 48TFBGA
  • Series:-
  • Mfr:Alliance Memory, Inc.
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Asynchronous
  • Memory Size:4Mbit
  • Memory Organization:256K x 16
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:45ns
  • Voltage - Supply:2.7V ~ 3.6V
  • Operating Temperature:-40°C ~ 80°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:48-LFBGA
  • Supplier Device Package:48-TFBGA (6x8)
  • Access Time:45 ns
  • Grade:-
  • Qualification:-

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AS6C4016B-45BIN

Overview

The AS6C4016B-45BIN is an asynchronous CMOS static random-access memory (SRAM) manufactured by Alliance Memory, Inc. It features a storage capacity of 64 Mbit organized as 8M x 8 bits. The device supports a supply voltage range from 2.7 V to 3.6 V and offers a maximum access time of 45 ns. It operates within an industrial temperature range of -40°C to +85°C and utilizes a 48-ball TFBGA package.

Feature Summary

  • Asynchronous parallel interface for direct system integration
  • Low power consumption characteristics suitable for battery-operated applications
  • Industrial temperature rating for reliable operation in harsh environments

Applications

  • Industrial control systems requiring non-volatile data retention during power cycles
  • Embedded systems with strict space constraints due to compact packaging
  • Automotive electronics operating under wide temperature variations

Procurement Notes

Verify the specific suffix BIN against official datasheets to confirm package type and die revision. Ensure compatibility with 3.3V logic levels. Confirm RoHS compliance status through manufacturer documentation before procurement.

Selection Notes

Select this component when 64 Mbit capacity and 45 ns speed are required. Consider the TFBGA package for board space optimization. Verify that the 2.7V to 3.6V voltage range matches the target system design.

Part Context

This part belongs to the AS6C4016B series of low-power SRAMs. It provides high-density storage in a small form factor. The series is designed for applications needing fast random access without the complexity of synchronous interfaces.

Replacement Considerations

Check for pin-compatible alternatives within the same series. Verify electrical parameters match exactly. Consult manufacturer obsolescence notices for long-term availability.

AS6C4016B-45BINAS6C4016B-45BIN
$4.37
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