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Product Detailed Parameters
- Description：IC SRAM 64KBIT PARALLEL 28DIP
- Series：-
- Mfr：Alliance Memory, Inc.
- Package：Tube
- Memory Type：Volatile
- Memory Format：SRAM
- Technology：SRAM - Asynchronous
- Memory Size：64Kbit
- Memory Organization：8K x 8
- Memory Interface：Parallel
- Write Cycle Time - Word, Page：55ns
- Voltage - Supply：2.7V ~ 5.5V
- Operating Temperature：0°C ~ 70°C (TA)
- Mounting Type：Through Hole
- Package / Case：28-DIP (0.600", 15.24mm)
- Supplier Device Package：28-PDIP
- Access Time：55 ns
- Grade：-
- Qualification：-
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Overview
The AS6C6264-55PCN is an asynchronous static random-access memory (SRAM) integrated circuit manufactured by Alliance Memory, Inc. It features a storage capacity of 64 kilobits organized as 8K words by 8 bits. The device supports a supply voltage range from 2.7V to 5.5V and offers a maximum access time of 55 nanoseconds. It is housed in a 28-pin dual in-line package (PDIP) designed for through-hole mounting. The component operates within a commercial temperature range of 0°C to 70°C.
Feature Summary
- Asynchronous parallel interface for direct data access without clock synchronization
- Wide operating voltage compatibility supporting both 3V and 5V logic systems
- Through-hole packaging suitable for standard printed circuit board insertion
Applications
- General-purpose volatile data storage in embedded microcontroller systems
- Cache memory implementation for processor acceleration
- Buffer storage in industrial control equipment
Procurement Notes
Verify the specific suffix PCN against official datasheets to confirm pinout and electrical characteristics match your design requirements. Ensure the selected variant aligns with your target operating temperature range and voltage specifications before finalizing procurement decisions.
Selection Notes
Select this component when a through-hole SRAM solution is required for designs needing 64Kbit capacity. Consider the 55ns access speed and wide voltage tolerance for applications interfacing with legacy or mixed-voltage logic families.
Part Context
This part belongs to the AS6C6264 series of low-power CMOS SRAMs. The series provides non-volatile retention only when powered and is characterized for commercial temperature operation. It serves as a standard memory solution for general electronic applications requiring fast random access capabilities.
Replacement Considerations
Direct substitutes include AS6C6264-55PIN and AS6C6264-55PCNI. Verify that alternative packages maintain identical pin configurations and electrical parameters to ensure seamless integration.
