AS6C6416-55BIN

Overview

The AS6C6416-55BIN is an asynchronous CMOS static random-access memory (SRAM) manufactured by Alliance Memory. It provides a storage capacity of 64 Mbit, organized as 4M x 16 bits. The device features a maximum random access time of 55 ns and operates within a supply voltage range of 2.7 V to 3.6 V. It utilizes a parallel interface and is housed in a 48-pin TSOP package designed for surface mount technology. The component supports single data rate (SDR) operations and is rated for industrial temperature ranges from -40°C to +85°C.

Feature Summary

• Asynchronous operation with parallel interface for direct system integration
• Low power consumption characteristics suitable for battery-operated applications
• Industrial temperature rating ensuring reliability in harsh environments

Applications

• Data buffering in embedded systems
• Cache memory in microcontroller-based designs
• Storage in telecommunications equipment

Procurement Notes

Verify the specific suffix BIN against official datasheets to confirm pinout and package dimensions. Ensure compatibility with 2.7V to 3.6V logic levels. Confirm RoHS compliance status through manufacturer documentation before procurement.

Selection Notes

Select this component when 64 Mbit capacity and 55 ns speed are required. Compare with AS6C6416-55TIN for alternative packaging options. Verify voltage requirements match the target system's 3.3V or 5V standards.

Part Context

This part belongs to the AS6C6416 series of high-density SRAMs. It shares architectural similarities with other Alliance Memory asynchronous SRAMs but differs in organization and package type. The series targets applications requiring fast, non-volatile-free memory solutions.

Replacement Considerations

Check for AS6C6416-55TIN as a potential alternative with different packaging. Verify electrical parameters against AS6C6416-55ZIN if wider voltage tolerance is needed.