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The AS6C6416-55BINTR is an asynchronous CMOS static random-access memory (SRAM) manufactured by Alliance Memory. It features a storage capacity of 64 Mbit organized as 4M x 16 bits. The device operates within a supply voltage range of 2.7V to 3.6V and supports a maximum access time of 55ns. It utilizes a parallel interface and is housed in a 48-pin Thin Shrink Small Outline Package (TSOP-II). The component is designed for industrial temperature applications, functioning reliably between -40°C and +85°C.
Verify the specific suffix BINTR against official datasheets to confirm package type and moisture sensitivity level. Ensure compatibility with 3.3V logic levels and check for RoHS compliance status prior to integration. Confirm availability through authorized distributors as lead times may vary based on production schedules.
Select this component when a 64 Mbit density with 16-bit width is required for asynchronous memory applications. It is suitable for designs needing industrial temperature ranges and TSOP-II surface mount packaging. Compare against similar Alliance Memory parts like the AS6C6416-55TIN if different packaging or commercial temperature ratings are acceptable.
This part belongs to the AS6C6416 series of asynchronous SRAMs from Alliance Memory. The series offers various speed grades and packaging options. The BINTR suffix typically denotes a specific tape-and-reel packaging format and potentially enhanced moisture resistance compared to standard tray packages, aligning with automated assembly requirements.
Direct replacements include the AS6C6416-55TIN for tray packaging or other speed variants within the AS6C6416 family. Verify pinout compatibility and electrical specifications before substituting.