AS6C6416-55TIN

AS6C6416-55TIN

$24.40
  • Description:IC SRAM 64MBIT PARALLEL 48TSOP I
  • Series:-
  • Mfr:Alliance Memory, Inc.
  • Package:Tray

SKU:ec0c053fe8aa Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:IC SRAM 64MBIT PARALLEL 48TSOP I
  • Series:-
  • Mfr:Alliance Memory, Inc.
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Asynchronous
  • Memory Size:64Mbit
  • Memory Organization:4M x 16
  • Memory Interface:Parallel
  • Write Cycle Time - Word, Page:55ns
  • Voltage - Supply:2.7V ~ 3.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package:48-TSOP I
  • Access Time:55 ns
  • Grade:-
  • Qualification:-

Download product information

AS6C6416-55TIN

Overview

The AS6C6416-55TIN is an asynchronous CMOS static random-access memory (SRAM) manufactured by Alliance Memory. It provides a storage capacity of 64 Mbit, organized as 4M words by 16 bits. The device features a maximum access time of 55 ns and operates within a supply voltage range of 2.7 V to 3.6 V. It utilizes a parallel interface and is housed in a 48-pin TSOP II package designed for surface-mount technology. The component supports single data rate (SDR) operations and is rated for industrial temperature ranges from -40°C to +85°C.

Feature Summary

  • Asynchronous operation with parallel interface for direct system integration
  • Low power consumption characteristics suitable for battery-operated applications
  • Industrial temperature rating ensuring reliability in harsh environments
  • CMOS technology providing high-speed data access

Applications

  • Data buffering in embedded systems
  • Cache memory in microprocessor-based designs
  • Storage in telecommunications equipment
  • Industrial control system memory modules

Procurement Notes

Verify the specific suffix 'TIN' confirms the TSOP-II 48-pin package and lead-free compliance. Confirm the '-55' speed grade matches the required 55 ns access time for the target circuit timing constraints. Ensure the 3.3V nominal voltage requirement aligns with the system power rails, as the device specifies a 2.7V to 3.6V operating range. Check for RoHS certification status if environmental compliance is mandatory for the assembly process.

Selection Notes

Select this component when a large word-width memory buffer is required without complex controller logic. The 16-bit data width reduces pin count compared to narrower interfaces for equivalent capacity. Consider the 55 ns access speed against system clock requirements. The TSOP-II package offers a compact footprint for dense PCB layouts. Verify that the 3.3V supply constraint fits the design, as wider voltage variants exist for 5V systems.

Part Context

This part belongs to the Alliance Memory AS6C6416 series of asynchronous SRAMs. The series typically includes variants with different access speeds and packaging options. The AS6C6416 designation indicates the 64 Mbit density and 16-bit organization. Other suffixes may denote different temperature grades or package types within the same functional family.

FAQ

What is the maximum operating voltage for the AS6C6416-55TIN?

The maximum operating voltage is 3.6 V.

Does this component support synchronous clocked operations?

No, it is an asynchronous SRAM and does not use a clock signal for data transfer.

AS6C6416-55TINAS6C6416-55TIN
$24.40
Buy Now