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The AS6C6416-55TIN is an asynchronous CMOS static random-access memory (SRAM) manufactured by Alliance Memory. It provides a storage capacity of 64 Mbit, organized as 4M words by 16 bits. The device features a maximum access time of 55 ns and operates within a supply voltage range of 2.7 V to 3.6 V. It utilizes a parallel interface and is housed in a 48-pin TSOP II package designed for surface-mount technology. The component supports single data rate (SDR) operations and is rated for industrial temperature ranges from -40°C to +85°C.
Verify the specific suffix 'TIN' confirms the TSOP-II 48-pin package and lead-free compliance. Confirm the '-55' speed grade matches the required 55 ns access time for the target circuit timing constraints. Ensure the 3.3V nominal voltage requirement aligns with the system power rails, as the device specifies a 2.7V to 3.6V operating range. Check for RoHS certification status if environmental compliance is mandatory for the assembly process.
Select this component when a large word-width memory buffer is required without complex controller logic. The 16-bit data width reduces pin count compared to narrower interfaces for equivalent capacity. Consider the 55 ns access speed against system clock requirements. The TSOP-II package offers a compact footprint for dense PCB layouts. Verify that the 3.3V supply constraint fits the design, as wider voltage variants exist for 5V systems.
This part belongs to the Alliance Memory AS6C6416 series of asynchronous SRAMs. The series typically includes variants with different access speeds and packaging options. The AS6C6416 designation indicates the 64 Mbit density and 16-bit organization. Other suffixes may denote different temperature grades or package types within the same functional family.
The maximum operating voltage is 3.6 V.
No, it is an asynchronous SRAM and does not use a clock signal for data transfer.